红外探测器在某些特殊环境的应用对探测器的可靠性提出了新的要求。为研究湿热环境对PbS探测器性能的影响，叙述了PbS薄膜的化学水浴制备方法及PbS薄膜形貌、性能测试及干-湿环境交替试验的过程，阐述了PbS探测器芯片经干-湿热环境试验后暗阻、噪声和D*探测率的变化情况。充分湿热后，PbS的暗阻增大，而充分干燥后，暗阻值又回落。暗阻值随干-湿环境交替变化而变化并具有一定的可逆性。PbS探测器芯片暗阻的这种变化，是因PbS颗粒在湿热环境下吸附H2O等因素产生的电阻ΔR与PbS颗粒的电阻R0构成一个等效的串联电阻，ΔR随着PbS芯片在湿热环境时间的长短或者在干燥环境而变化，形成一种类似于可调节状态的可变电阻。干-湿环境对PbS探测器噪声影响的变化趋势与其对暗阻值影响的变化趋势一致，而对D*探测率影响的变化趋势与之相反。

New requirements on the reliability of the detector are put forward for the application of infrared detector in some special environment. In order to study the effect of hygrothermal environment on PbS detector performance, the PbS films had been prepared by CMD, surface morphology of the PbS films were showed, performance and experiment between dry and hygrothermal environment were specified. The influence of Rd, Vs, Vn and D* between dry and hygrothermal environment were analyzed. The Rd of PbS photoconductive detectors had been incresed in hygrothermal environment and decresed in dry environment. The varieties of Rd was reversible between dry and hygrothermal environment, for the resistance of the PbS particles R0 and ΔR that had produced from the absorption of H2O in hygrothermal environment were constituted an equivalent series resistance, and ΔR changed with PbS detector in dry and hygrothermal environment, to form a kind of similar to the adjustable state variable resistance. The trend of Vn variety between dry and hygrothermal environment is same to that of the Rd, and on the opposition that of the D*.