Journal of Semiconductors, 2023, 44 (8): 082501, Published Online: Sep. 21, 2023
Spin injection into heavily-doped n-GaN via Schottky barrier
Abstract
Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.
Zhenhao Sun, Ning Tang, Shuaiyu Chen, Fan Zhang, Haoran Fan, Shixiong Zhang, Rongxin Wang, Xi Lin, Jianping Liu, Weikun Ge, Bo Shen. Spin injection into heavily-doped n-GaN via Schottky barrier[J]. Journal of Semiconductors, 2023, 44(8): 082501.