Author Affiliations
Abstract
1 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
2 Frontiers Science Center for Nano-optoelectronics & Collaboration Innovation Center of Quantum Matter, Peking University, Beijing 100871, China
3 Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
4 International Center for Quantum Materials, Peking University, Beijing 100871, China
Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures. A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts. The spin injection efficiency of 21% was achieved at 1.7 K. It was confirmed that the thin Schottky barrier formed between the heavily n-doped GaN and Co was conducive to the direct spin tunneling, by reducing the spin scattering relaxation through the interface states.
GaN spin injection Schottky barrier magnetoresistance Journal of Semiconductors
2023, 44(8): 082501
1 中国工程物理研究院电子工程研究所，四川 绵阳 621999
2 中国工程物理研究院微系统与太赫兹研究中心，四川 绵阳 621999
自旋电子学的某些物理现象，如交换型磁振子、反铁磁共振、超快自旋动力学等，其特征频率刚好处于太赫兹频段。利用相应的自旋电子学现象和原理，研究人员发现和建立了若干新型的太赫兹波产生方法，为新型太赫兹源的实现和发展提供指导方向。这些新型产生方法有: a) 自旋注入产生太赫兹波; b) 基于反铁磁共振的太赫兹波产生; c) 基于超快自旋动力学的太赫兹波产生。理论及实验结果表明，基于自旋电子学的太赫兹产生方法具有较大的潜力，有望推动太赫兹技术的发展。
太赫兹波 自旋电子学 自旋注入 磁振子 反铁磁共振 超快自旋动力学 THz wave spintronics spin injection magnon antiferromagnetic resonance ultrafast spin dynamics 太赫兹科学与电子信息学报
2016, 14(4): 502
