该文分别开发了两种基于AlN压电材料和原子数分数为10%的Sc掺杂AlN压电材料的薄膜叠层异质谐振器。通过有限元仿真和实验对比分析了器件的频率温度性能和Sc掺杂对谐振器声激励的影响。结果表明，Sc掺杂可能会影响压电薄膜叠层谐振器所激励声波的谐振频率、机电耦合系数和对应的频率温度系数(TCF)，且对所激励声波的正反谐振点的TCF影响不同。此研究在传感及滤波器件领域极具应用潜力。

Two kinds of thin film heterogeneously stacked resonators based on AlN piezoelectric material and 10% Sc-doped AlN piezoelectric material respectively have been developed in this paper. The effect of Sc doping on the acoustic excitation of the resonator and the frequency-temperature performance of the device are compared and analyzed by the finite element simulation and experiment. The results show that Sc doping may affect the resonant frequency, electromechanical coupling coefficient and corresponding frequency-temperature coefficient (TCF) of the acoustic wave excited by the piezoelectric thin-film stacked resonator, and has different effects on the TCF of the resonant and anti-resonant points of the excited acoustic wave. This work has great application potential in the field of sensors and filters.