二氧化钒材料相变的太赫兹光谱与阵列成像
[1] MORIN F J. Oxides which show a metal-to-insulator transition at the Neel temperature[J]. Physical Review Letters, 1959,3(1): 34-36.
[2] LIU K,LEE S,YANG S,et al. Recent progresses on physics and applications of vanadium dioxide[J]. Materials Today, 2018,21(8): 875-896.
[3] 沙浩,吴志明,蒋亚东,等.太赫兹波段二氧化钒薄膜的研究进展 [J].材料导报, 2019,33(8):2513-2523. (SHA Hao,WU Zhiming,JIANG Yadong,et al. Recent progress on vanadium dioxide thin film at terahertz range[J]. Materials Review, 2019,33 (8):2513-2523.)
[4] JEPSEN P U, FISCHER B M, THOMAN A, et al. Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy[J]. Physical Review B, 2006,74(20):205103.
[5] SHI Q W,HUANG W X,ZHANG Y X,et al. Giant phase transition properties at terahertz range in VO2 films deposited by Sol-Gel method[J]. ACS Applied Materials & Interfaces, 2011,3(9):3523-3527.
[6] DRISCOLL T,KIM H T,CHAE B G,et al. Memory metamaterials[J]. Science, 2009,325(5947):1518-1521.
[7] KO C,RAMANATHAN S. Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry[J]. Applied Physics Letters, 2008(93):252101.
[8] HE X F,XU J,XU X F,et al. Negative capacitance switching via VO2 band gap engineering driven by electric field[J]. Applied Physics Letters, 2015(106):093106.
[9] NAKAJIMA M,TAKUBO N,HIROI Z,et al. Photoinduced metallic state in VO2 proved by the terahertz pump-probe spectroscopy[J]. Applied Physics Letters, 2008,92(1):011907.
[10] FAN F, GU W H, CHEN S, et al. State conversion based on terahertz plasmonics with vanadium dioxide coating controlled by optical pumping[J]. Optics Letters, 2013,38(9):1582-1584.
[11] CHOI S B,KYOUNG J S,KIM H S,et al. Nanopattern enabled terahertz all-optical switching on vanadium dioxide thin film[J]. Applied Physics Letters, 2011,98(7):071105.
[12] VEGESNA S, ZHU Y H, ZHAO Y, et al. Terahertz frequency selective surface with reconfigurable polarization characteristics using vanadium dioxide[J]. Journal of Electromagnetic Waves and Applications, 2014,28(1):83-90.
[13] KIM H,CHARIPAR N,BRECKENFELD E,et al. Active terahertz metamaterials based on the phase transition of VO2 thin films[J]. Thin Solid Films, 2015(596):45-50.
[14] LIU H W, WONG L M, WANG S J, et al. Ultrafast insulator-metal phase transition in vanadium dioxide studied using optical pump-terahertz probe spectroscopy[J]. Journal of Physics:Condensed Matter, 2012,24(41):415604.
[15] 毛茂,黄婉霞,张雅鑫,等 .钨掺杂二氧化钒薄膜的 THz波段相变性能的研究 [J].无机材料学报, 2012,27(8):891-896. (MAO Mao,HUANG Wanxia,ZHANG Yaxin,et al. Study on phase transition property of tungsten-doped vanadium dioxide thin film at terahertz range[J]. Journal of Inorganic Materials, 2012,27(8):891-896.)
[16] ZHANG H F,WU Z M,NIU R H,et al. Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range[J]. Applied Surface Science, 2015(331):92-97.
[17] MENG Y F, SANG J X, LIU Z, et al. Micro-nano scale imaging and the effect of annealing on the perpendicular structure of electrical-induced VO2 phase transition[J]. Applied Surface Science, 2019(470):168-176.
[18] GRIFFITHS P R,DE HASETH J A. Fourier transform infrared spectrometry[M]. 2nd ed. New York:John Wiley & Sons, 2007: 19-93.
[19] ZHANG H T,ZHANG L,MUKHERJEE D,et al. Wafer-scale growth of VO2 thin films using a combination approach[J]. Nature Communications, 2015(6):8475.
[20] VERNARDOU D, PEMBLE M E, SHEEL D W. Vanadium oxides prepared by liquid injection MOCVD using vanadyl acetylacetonate[J]. Surface and Coatings Technology, 2004(188-189):250-254.
[21] FAN S J,FAN L L,LI Q,et al. The identification of defect structures for oxygen pressure dependent VO2 crystal films[J]. Applied Surface Science, 2014(321):464-468.
[22] BRASSARD D, FOURMAUX S, JEAN-JACQUES M, et al. Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films[J]. Applied Physics Letters, 2005,87(5):051910.
[23] XU X F, YIN A Y, DU X L, et al. A novel sputtering oxidation coupling(SOC) method to fabricate VO2 thin film[J]. Applied Surface Science, 2010(256):2750-2753.
[24] MENG Y F,HUANG K,TANG Z,et al. The effect of argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film[J]. Applied Surface Science, 2018(427):304-311.
[25] FU Z L,GU L L,GUO X G,et al. Frequency up-conversion photon-type terahertz imager[J]. Scientific Reports, 2016(6):25383.
谭智勇, 万文坚, 曹俊诚. 二氧化钒材料相变的太赫兹光谱与阵列成像[J]. 太赫兹科学与电子信息学报, 2022, 20(12): 1225. TAN Zhiyong, WAN Wenjian, CAO Juncheng. Terahertz spectroscopy and array imaging of phase transition of vanadium dioxide[J]. Journal of terahertz science and electronic information technology, 2022, 20(12): 1225.