[1] HUANG Y G, TAN G J, GOU F W, et al. Prospects and challenges of mini-LED and micro-LED displays[J]. Journal of the Society for Information Display, 2019, 27(7): 387-401.

[2] ZHANG L, OU F, CHONG W C, et al. Wafer-scale monolithic hybrid integration of Si-based IC and Ⅲ-Ⅴ epi-layers—a mass manufacturable approach for active matrix micro-LED micro-displays[J]. Journal of the Society for Information Display, 2018, 26(3): 137-145.

[3] NAKAMITSU S, ITO H, SUZUKI T, et al. News Paper: high PPI micro LED display for small and medium size[J]. SID Symposium Digest of Technical Papers, 2019, 50(1): 137-140.

[4] 郑泽平, 林志贤, 叶芸, 等．非转移与非键合的高密度Micro-LED显示器的设计与实现[J].半导体光电, 2019, 40(1): 42-47．

    ZHENG Z P, LIN Z X, YE Y, et al. Design and implementation of non-transferred and non-bonded high-density micro-LED displays[J]. Semiconductor Optoelectronics, 2019, 40(1): 42-47. (in Chinese)

[5] LI C C, ZHAN J L, CHEN Z Z, et al. Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities[J]. Optics Express, 2019, 27(16): A1146-A1155.

[6] LEE V W, TWU N, KYMISSIS I. Micro-LED technologies and applications[J]. Information Display, 2016, 32(6): 16-23.

[7] LI Y, TAO J, ZHAO Y Z, et al. 48× 48 pixelated addressable full-color micro display based on flip-chip micro LEDs[J]. Applied Optics, 2019, 58(31): 8383-8389.

[8] CHOI H W, JEON C W, DAWSON M D, et al. Efficient GaN-based micro-LED arrays[C]//Proceedings of Materials Research Society Symposium. Warrendale, PA: Materials Research Society, 2002: 433-438.

[9] OU F, CHONG W C, XU Q C, et al. Monochromatic active matrix micro-LED micro-displays with> 5, 000 dpi pixel density fabricated using monolithic hybrid integration process[J]. SID Symposium Digest of Technical Papers, 2018, 49(1): 1677-1680.

[10] 李伟, 岳庆炀, 孔繁敏, 等．顶端ZnO纳米结构对GaN基LED光提取效率的影响[J].光子学报, 2013, 42(4): 409-416．

    LI W, YUE Q Y, KONG F M, et al. Influence of surface ZnO nano-structures on the light emitting efficiency of GaN-based LED[J]. Acta Photonica Sinica, 2013, 42(4): 409-416. (in Chinese)

[11] KIM J K, XI J Q, SCHUBERT E F. Omni-directional reflectors for light-emitting diodes[C]//Proceedings of the SPIE 6134, Light-Emitting Diodes: Research, Manufacturing, and Applications X. San Jose: SPIE, 2006: 61340D.

[12] 李艳菲, 张方辉, 牟曦媛, 等．利用有机覆盖层提高OLED出光效率[J].液晶与显示, 2012, 27(3): 308-312．

    LI Y F, ZHANG F H, MU X Y, et al. Improved light out-coupling in organic light emitting diodes employing organic capping layer[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(3): 308-312. (in Chinese)

[13] FUJII T, GAO Y, SHARMA R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J]. Applied Physics Letters, 2004, 84(6): 855-857.

[14] SHCHEKIN O B, EPLER J E, TROTTIER T A, et al. High performance thin-film flip-chip InGaN-GaN light-emitting diodes[J]. Applied Physics Letters, 2006, 89(7): 071109.

[15] HUANG X H, LIU J P, KONG J J, et al. High-efficiency InGaN-based LEDs grown on patterned sapphire substrates[J]. Optics Express, 2011, 19(S4): A949-A955.

[16] LIU W Z, XU H Y, WANG C L, et al. Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration[J]. Nanoscale, 2013, 5(18): 8634-8639.

[17] SHIU G Y, CHEN K T, FAN F H, et al. InGaN light-emitting diodes with an embedded nanoporous GaN distributed Bragg reflectors[J]. Scientific Reports, 2016, 6(1): 29138.

[18] KORTüM G. Reflectance Spectroscopy: Principles, Methods, Applications[M]. Berlin: Springer, 2012.

[19] 申屠伟进, 胡飞, 韩彦军, 等．GaN基发光二极管芯片光提取效率的研究[J].光电子·激光, 2005, 16(4): 385-389．SHENTU W J, HU F, HAN Y J, et al. Study on light extraction efficiency of GaN-based light-emitting diode chips[J]. Journal of Optoelectronics·Laser, 2005, 16(4): 385-389. (in Chinese)

[20] HUANG Q, WALZER K, PFEIFFER M, et al. Highly efficient top emitting organic light-emitting diodes with organic outcoupling enhancement layers[J]. Applied Physics Letters, 2006, 88(11): 113515.

[21] HONG E, NARENDRAN N. A method for projecting useful life of LED lighting systems[C]//Proceedings of the SPIE 5187, Third International Conference on Solid State Lighting. San Diego: SPIE, 2004: 93-99.

[22] QIAN X L, ZOU J, SHI M M, et al. Development of optical-thermal coupled model for phosphor-converted LEDs[J]. Frontiers of Optoelectronics, 2019, 12(3): 249-267.