Photonics Research, 2024, 12 (4): 767, Published Online: Mar. 29, 2024
High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system
Abstract
Expanding the optical communication band is one of the most effective methods of overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn resonance cavity enhanced (RCE) photodetectors (PDs) with an active layer Sn component of – were designed and fabricated on an SOI substrate. The GeSn RCE PDs present a responsivity of 0.49 A/W at 2 μm and a 3-dB bandwidth of approximately 40 GHz at 2 μm. Consequently, Si-based 2 μm band optical communication with a transmission rate of 50 Gbps was demonstrated by using a GeSn RCE detector. This work demonstrates the considerable potential of the Si-based 2 μm band photonics in future high-speed and high-capacity optical communication.
Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Yazhou Yang, Zhipeng Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng. High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system[J]. Photonics Research, 2024, 12(4): 767.