中国激光, 2013, 40 (11): 1107002, 网络出版: 2013-10-24
辉光放电辅助脉冲激光沉积CNx薄膜的价键结构及机械性能
Valence Bond Structure and Mechanical Properties of CNx Films Prepared by Glow Discharge Assisted Pulsed Laser Deposition
薄膜 氮化碳 脉冲激光沉积 X射线光电子谱 摩擦与磨损 thin films CNx pulsed laser deposition X-ray photoelectron spectroscopy friction and wear
摘要
采用直流辉光放电辅助脉冲激光沉积(PLD)法,以不同的激光通量在单晶硅基底上沉积CNx薄膜。利用扫描电镜(SEM)、拉曼光谱、X射线衍射(XRD)谱、X射线光电子谱(XPS)、纳米压入仪和球盘式微型摩擦磨损试验仪对薄膜的成分、微观结构、表面形貌、力学及摩擦学性能进行了系统分析。结果表明:所有薄膜处于非晶状态。当激光通量从5.1 J/cm2提升至7.5 J/cm2时,薄膜的含氮原子数分数由27.7%上升至34.1%;膜中sp3C—N键和sp2C—N键的面积百分数上升,sp3C—C键的面积百分数降低, C原子sp3杂化程度增加,薄膜的石墨化程度下降;薄膜的硬度由3.7 GPa增加至5.3 GPa,磨损率从3.8×10-13 m3/(N·m)下降至7.9×10-14 m3/(N·m),摩擦系数从0.13上升至0.18。
Abstract
The CNx films are deposited on monocrystalline silicon by direct current glow discharge assisted pulsed laser deposition (PLD) technique under various laser fluxes. The composition, microstructure, surface morphology, mechanical and tribological properties of the films are characterized by scanning electron microscopy (SEM), Raman spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nano indenter and ball-on-disk tribometer, respectively. The results show that the films are of amorphous structure. The nitrogen atomic content of the CNx film increases from 27.7% to 34.1% with the increase of laser flux from 5.1 J/cm2 to 7.5 J/cm2. An increased area percentage of sp3C—N bond, sp2C—N bond, and a decreased area percentage of sp3C—C bond are observed in the film. An increased degree of carbon sp3 hybrid and a decreased degree of graphitization of the film are found. With the increasing of laser flux, the film hardness increases from 3.7 GPa to 5.3 GPa, the wear rate of the film decreases from 3.8×10-13 m3/(N·m) to 7.9×10-14 m3/(N·m), and the friction coefficient increases from 0.13 to 0.18, respectively.
郑晓华, 宋建强, 杨芳儿, 陈占领. 辉光放电辅助脉冲激光沉积CNx薄膜的价键结构及机械性能[J]. 中国激光, 2013, 40(11): 1107002. Zheng Xiaohua, Song Jianqiang, Yang Fanger, Chen Zhanling. Valence Bond Structure and Mechanical Properties of CNx Films Prepared by Glow Discharge Assisted Pulsed Laser Deposition[J]. Chinese Journal of Lasers, 2013, 40(11): 1107002.