为实现大尺寸锑化铟混成芯片的高质量、高成品率背减薄, 介绍了一种单点金刚石车削与磨抛相结合的背减薄工艺。该工艺采用单点金刚石车削技术实现锑化铟芯片大量厚度去除, 然后通过旋转磨削工艺进一步去除车削损伤, 最终实现了1280×1024元(25 m)大尺寸锑化铟混成芯片背减薄(材料表面的半峰宽值约为8.20～11.90 arcsec)。与传统磨削工艺相比, 该工艺对尺寸大、面型差的半导体芯片兼容性强, 解决了大尺寸芯片在传统磨削工艺中因面型带来的裂片率高、减薄厚度不均匀的问题。

In order to realize the high quality and high yield back thinning of large size InSb hybrid chips, a single-point diamond turning technology combined with grinding and polishing process is introduced. This process uses single-point diamond turning technology to remove a large amount of thickness of InSb chip, and on this basis, further remove the turning damage through rotary grinding process. Finally the back of 1280×1024 (25 m) large-size InSb hybrid chip is thinned. The half-peak width of the material surface is about 8.20--11.90 arcsec. Compared with the traditional grinding process, this process has strong compatibility with semiconductor chips with large size and poor surface shape, and solves the problems of high crack rate and uneven thinning thickness caused by surface shape problems of large size chips in the traditional grinding process.