用SCAPS构建了铜锑硫薄膜太阳电池模型, 计算了器件的性能。分别研究了吸收层厚度、载流子浓度、缺陷密度和背电极功函数对器件性能的影响。结果表明, 过薄的吸收层对绿光和红光吸收不充分, 1.5~3 μm厚的吸收层能满足光谱吸收要求。当受主浓度为2×1018 cm-3时, 器件光电转换效率最高。缺陷密度大于10-14 cm-3时, 器件的光电转换效率急剧降低。贫铜富硫气氛制备铜锑硫可以提高受主浓度, 减小开路电压亏损, 也可以抑制硫空位缺陷形成, 从而提高器件的光电转换效率。功函数较高的材料能降低背电极势垒, 减少载流子在背电极复合。材料参数优化后, 器件的光电转换效率最高为21.74%。

The model of copper-antimony-sulfur (CuSbS2) thin film solar cell was constructed, and the performance of the device was calculated by SCAPS. The effects of absorption layer thickness, carrier concentration, defect density, and back contact work function on the device performance were investigated. The results show that the green and red light are not fully absorbed by too thin absorption layer, and the absorption layer with the thickness of 1.5 μm to 3 μm can meet spectral absorption requirements. When the acceptor concentration is 2×1018 cm-3, the photoelectricity conversion efficiency (PCE) of the device is the highest. When the defect density is larger than 10-14 cm-3, the PCE of the device decreases sharply. CuSbS2 prepared in a copper-poor and sulfur-rich atmosphere can increase the accepter concentration, reduce the open circuit voltage defect, and inhibit the formation of sulfur vacancy defects, thus improving the PCE of the device. High work function materials can decrease the back contact barrier and reduce carrier recombination. After the material parameters have been optimized, the highest PCE of the device is 21.74%.