为了解决传统提拉单晶体生长界面不稳定的难题, 该文在传统全自动提拉单晶炉等径控制理论的基础上, 通过原料补充装置, 不断添加与晶体生长量相等的晶体原料至坩埚内, 以稳定晶体生长液面的高度不变; 再通过光学放大和电荷耦合器件(CCD)成像装置测量晶体实时直径的变化, 以此变化率调整晶体旋转速度, 最终使晶体生长界面始终维持在一个相对稳定的理想状态, 从而保证晶体外形符合设定要求和内部品质的优良。

In order to solve the problem of unstable interface in the conventional Czochralskysingle crystal growth interface, on the basis of the conventional automatic control theory of the single crystal equal diameter, through raw material supplement device, the crystal raw materials equal to the crystal grow amount being added constantly into the crucible to stable the height of crystal growth liquid surface. Then, the real-time diameter change of the crystal is measured by the optical amplifier and charge coupled device (CCD) imaging device, and the crystal rotation speed is adjusted by this rate of change, and finally the crystal growth interface is always maintained in a relatively stable ideal state to ensure that the crystal shape conforms to the setting requirements and the internal quality in the crucible stable crystal growth on the surface of the liquid height is not changed, and then through the optical amplifier and CCD imaging device measuring crystal diameter variation in real time, in order to adjust the crystal rotation rate, eventually make crystal growth interface is always maintained in a relatively stable state of ideal, ensure crystal conform to the requirements of the set and the internal quality of excellent shape.