利用分子束外延技术在GaAs（100）衬底上生长了1.3 μm InAs DWELL量子点激光器结构，研究了有源区Be掺杂对量子点激光器性能的影响。研究表明，对有源区进行Be掺杂可以有效降低InAs量子点激光器的阈值电流密度，提升激光器的输出功率，增加激光器的温度稳定性。研制的Be掺杂InAs量子点激光器的阈值电流降低到12 mA，相应的阈值电流密度仅为100 A/cm²，激光器的最高输出功率达到183 mW，最高工作温度达到了130 ℃。这对InAs量子点激光器器件在光通信系统中的应用具有重要意义。

InAs DWELL quantum dot lasers were grown on GaAs(100) substrate by molecular beam epitaxy technology, and the effect of Be doping in active regions on the performance of InAs quantum dot lasers has been studied. The results show that Be-doped in the active region could effectively reduce the threshold current density, improve the output power, and increase the temperature stability of the InAs quantum dot laser.The threshold current of Be-doped InAs quantum dot laser was reduced to 12 mA, and the corresponding threshold current density was 100 A/cm². The highest output power of the laser was 183 mW, and the highest operating temperature reached 130 ℃. This is of great significance for the application of InAs quantum dot laser device in the optical communication system.