Z-型光催化剂可以有效增强电荷分离, 从而改善光催化剂的活性。采用浸渍-煅烧和水热法两步制备Z型BiVO₄/GO/g-C₃N₄光催化剂, 并用不同手段对其进行表征。在BiVO₄/GO/g-C₃N₄的光催化过程中, GO纳米片作为BiVO₄和g-C₃N₄之间的快速传输通道, 可以抑制电子-空穴复合, 显著促进电荷分离, 提高三元异质结的氧化还原能力。与单组分或二元复合物相比, 该催化剂具有良好的光降解罗丹明B(RhB)的能力。在可见光照射下, 它能够在120 min内降解85% RhB, 空穴(h⁺)在反应中起主要作用。该工作为三元光催化剂体系提供了简单的制备方法, 其中g-C₃N₄通过GO与BiVO₄偶联, 光催化活性显著提高。

Fabricating Z-scheme photocatalysts is a promising method for improving photocatalytic activity by effectively enhancing charge separation. A new Z-scheme BiVO₄/GO/g-C₃N₄ photocatalyst was prepared by two steps of impregnation-calcination and hydrothermal method, and then characterized by different methods. In the photocatalytic process of BiVO₄/GO/g-C₃N₄, GO nanosheet act as fast transmission channels between BiVO₄ and g-C₃N₄ and can suppress electron-hole recombination, which significantly promotes the charge separation and improves the redox ability of the ternary heterojunction. The ternary photocatalyst has good photocatalytic degradation of Rhodamine B (RhB) as compared to the single-component or binary composite. It is capable of degrading 85% of RhB in 120 min under visible light irradiation and the hole (h⁺) plays a major role in the reaction. This work provides a simple preparation method for a ternary photocatalyst system in which g-C₃N₄ coupled with BiVO₄ by GO to significantly improve photocatalytic activity.