针对无掩膜光刻技术在进行大面积图形曝光时会出现曝光质量差, 精度低, 程序繁等问题, 该文提出了一种改善无掩膜光刻机图形质量的方法。通过设置“L”型定位标记将图形尺寸进行精确定位, 再通过单场图像格式重命名系统, 解决大面积图形切割过程中的乱序问题, 最后提出了一种寻找最佳曝光位置的方法, 以提高单场图形的曝光质量。该文提出了一种减小大面积图形拼接误差的方法, 以提高整体图形的拼接质量; 同时还提出了一种二次光刻的对准方法及对准误差校正方法, 该方法与已有的套刻方法有区别。通过实验进行验证和分析, 结果表明, 该方法能有效地提高大面积图形的曝光质量, x、y方向的拼接误差距离均缩小到1 μm内, 对准误差精度达到±0.3 μm。该研究为后续的光刻工艺及湿法腐蚀工艺奠定了理论基础。

In order to solve the problems of poor exposure quality, low accuracy and complicated procedures in large-area pattern exposure, a method to improve the quality of maskless lithography is proposed. The graphic size is accurately positioned by setting the “L-shaped” positioning mark, and then the disorder problem in the process of large-area graphic cutting is solved through the single field image format renaming system. Finally, a method to find the best exposure position is proposed to improve the exposure quality of the single-field graphics. A method to reduce the stitching error of large area graphics is proposed to improve the stitching quality of the whole graphics. At the same time, an alignment method and alignment error correction method for the second lithography are also proposed, which is different from the existing nesting lithography method. It is verified and analyzed by experiment. The results show that the proposed method can effectively improve the exposure quality of large-area graphics, and the stitching error distance in x direction and y direction are both reduced to within 1 μm, and the alignment error accuracy reaches ±0.3 μm. This study lays a theoretical foundation for the subsequent lithography and wet etching processes.