光子学报, 2018, 47 (1): 0125001, 网络出版: 2018-01-30
基于标准CMOS工艺的非接触式保护环单光子雪崩二极管
Single Photon Avalanche Diode with Non-contact Guard Ring Based on CMOS Technology
光电器件 单光子雪崩二极管 CMOS工艺 深n阱 保护环 响应度 光子探测效率 Photoelectronic devices Single photon avalanche diode CMOS technology Deep Nwell structure Guard ring responsivity Photon detection efficiency
摘要
基于深亚微米CMOS工艺, 设计了一种采用非接触式P阱保护环来抑制边缘击穿的单光子雪崩二极管结构.采用器件仿真软件Silvaco Atlas分析了保护环间距对器件的电场分布和雪崩触发概率等特性的影响, 结合物理模型计算了所设计器件的暗计数概率和光子探测效率.仿真和计算结果表明, 保护环间距d=0.6 μm时器件性能最优, 此时击穿电压为13.5 V, 暗电流为10-11A.在过偏压为2.5 V时, 门控模式下的暗计数概率仅为0.38%, 器件在400~700 nm之间具有良好的光学响应, 500 nm时的峰值探测效率可达39%.
Abstract
A single photon avalanche diode with non-contact guard ring was proposed based on standard CMOS technology. The influences of the guard ring's spacing on the electric field distribution and the avalanche probability of the device were analyzed by using Silvaco Atlas. The dark count probability and the photon detection efficiency of SPAD operated under gate-model were calculated based on a physical model. The results shown that the device has optimal performance at the spacing d=0.6 μm. Under these conditions, a breakdown voltage of 13.5 V is obtained, and the dark current is as low as 10-11A. When the excess bias voltage is 2.5 V, the dark count probability is only 0.38%, the responsivities within the spectral range wavelength of 400 nm to 700 nm are decent, and the peak photon detection efficiency is up to 39% at 500 nm.
吴佳骏, 谢生, 毛陆虹, 朱帅宇. 基于标准CMOS工艺的非接触式保护环单光子雪崩二极管[J]. 光子学报, 2018, 47(1): 0125001. WU Jia-jun, XIE Sheng, MAO Lu-hong, ZHU Shuai-yu. Single Photon Avalanche Diode with Non-contact Guard Ring Based on CMOS Technology[J]. ACTA PHOTONICA SINICA, 2018, 47(1): 0125001.