利用p型宽带隙材料SiC替代p型GaN, 制作了一种p-SiC/n-GaN异质结双漂移(DDR)IMPATT二极管。对器件的交流大信号输出特性进行数值模拟仿真。结果表明, 相比传统GaN单漂移(SDR)IMAPTT二极管, p-SiC/n-GaN新结构DDR器件的击穿电压、最佳负电导、交流功率密度和直流-交流转换效率都获得了显著提高, 器件具有更宽的振荡频带。该器件新结构在交流功率密度方面具有显著的应用潜力, 交流功率密度达到1.97 MW/cm2。该二极管是基于宽带隙半导体材料设计, 这为GaN、SiC材料IMPATT器件的设计与制造提供参考价值。

A p-SiC/n-GaN heterojunction double drift (DDR) IMPATT diode was fabricated while p-GaN was replaced by wide bandgap p-SiC. The output characteristics of AC large signal were simulated numerically. The results showed that compared with the traditional GaN single drift (SDR) IMAPTT diode, the breakdown voltage, optimal negative conductance, AC power density and DC-AC conversion efficiency of the new p-SiC/N-GaN DDR device were significantly improved, and the device had a wider oscillation frequency band. The new structure of the device had significant application potential in AC power density, which reached 1.97 MW/cm2. The diode was based on the wide gap semiconductor material, which provided reference value for the design and manufacture of GaN and SiC IMPATT device.