荧光转换型近红外发光二极管（NIR pc-LED）具有体积小、谱带宽、峰位易调谐等优点，是新一代NIR光源发展的前沿，其关键在于研发可被蓝光有效激发的高效率宽带近红外荧光粉。LiScSi₂O₆∶Cr³⁺荧光材料的激发波长为460 nm，发射峰位在845 nm，光谱带宽为156 nm，内量子效率为64.4%。基于该体系，本文通过M离子（M = Ga³⁺，Lu³⁺，Y³⁺，Gd³⁺）取代Sc³⁺的方式对其性能进行调控。结果表明，引入M离子易生成杂相或发生相变，降低了材料的发光性能。本文从晶体结构出发对其调控过程进行了分析。

Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are expected to be the next-generation NIR light sources, which have the advantages of small size, broad bandwidth, and easy tuning of emission peaks. The key for NIR pc-LEDs is to develop highly efficient broadband NIR phosphors that can be effectively excited by blue light. LiScSi₂O₆∶Cr³⁺can be excited by blue light and emits NIR light peaked at 845 nm with a broad bandwidth of 156 nm and an internal quantum efficiency of 64.4%. Herein, Sc³⁺ is replaced by M ions (M = Ga³⁺, Lu³⁺, Y³⁺, Gd³⁺) to regulate the NIR luminescence. The introduction of M ions is easy to form heterogeneous phases or undergo phase transformation, thus reducing the NIR luminescence of the titled material. The regulation processes are analyzed based on the crystal structure.