Author Affiliations
Abstract
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing 100193, China
We demonstrated an electrically pumped InP-based microcavity laser operating in continuous-wave mode. The active region is designed with antimony surfactants to enhance the gain at 2 μm, and a selective electrical isolation scheme is used to secure continuous-wave operation for the microcavity laser at room temperature. The lasers were fabricated as a notched elliptical resonator, resulting in a highly unidirectional far-field profile with an in-plane beam divergence of less than 2°. Single-mode emission was obtained over the entire dynamic range, and the laser frequencies were tuned linearly with the pumping current. Overall, these directional lasers pave the way for portable and highly integrated on-chip sensing applications.
whispering-gallery mode continuous-wave operation electrical isolation directional emission 
Chinese Optics Letters
2023, 21(4): 041405
庞磊 1,2,3程洋 2,3赵武 2,3谭少阳 2,3[ ... ]周大勇 3
作者单位
摘要
1 四川大学 电子信息学院,四川 成都 610065
2 苏州长光华芯光电技术股份有限公司,江苏 苏州 215163
3 材料科学姑苏实验室,江苏 苏州 215123
中红外量子级联激光器在红外对抗、痕量气体检测、自由空间光通信等领域具有广阔的应用前景,采用MOCVD生长量子级联激光器的方法具有生产效率高、可做再生长、便于多组分生长等优点。报道了可室温连续波工作的中红外量子级联激光器,波长4.6 μm,采用MOCVD生长应变补偿的InGaAs/InAlAs材料。实验探究了不同掺杂对芯片性能的影响,通过优化掺杂浓度提升了器件性能。腔长3 mm,脊宽13 μm的芯片在288 K的温度下,脉冲模式下最大峰值功率达到722 mW,电光转换效率和阈值电流密度分别为6.3%和1.04 kA/cm2,在连续模式下功率输出达到364 mW。文中成功实现了用MOCVD生长中红外量子级联激光器,为中红外波段的激光应用提供了技术支撑。
中红外 量子级联激光器 金属有机物化学气相沉积 掺杂优化 连续波工作 mid-infrared quantum cascade laser MOCVD doping optimization continuous-wave operation 
红外与激光工程
2022, 51(6): 20210980
Jun Guo 1Jian Liu 2Jie Xu 1Bin Xu 3[ ... ]Jun Xu 2
Author Affiliations
Abstract
1 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
2 School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China
3 Department of Electronic Engineering, Xiamen University, Xiamen 361005, China
4 Research & Development Center of Material and Equipment, 26th Research Institute, China Electronics Technology Group Corporation, Chongqing 400060, China
5 School of Physics Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
A good thermo-optic property of strontium dodeca-aluminum oxide (SrAl12O12, SRA) host material is very advantageous to the development of high-performance lasers by doping rare-earth ions for gain medium. In this work, we report on diode-end-pumped high-performance continuous-wave and passively Q-switched Nd:SRA lasers. For continuous-wave operation, a maximum output power of 6.45 W is achieved at 1049 nm with a slope efficiency of about 41.6%. Using a Y3Al5O12 (YAG) etalon, we have firstly achieved a 1066 nm laser with a maximum output power of 4.15 W and a slope efficiency of about 27%, to the best of our knowledge. For passively Q-switched operation, with Cr4+:YAG as a saturable absorber, a maximum average output power of 1.82 W was achieved with the shortest pulse width of 18.2 ns at pulse repetition rate of 22.9 kHz. The single-pulse energy and pulse peak power were 79.4 μJ and 4.3 kW. This work has further verified that the Nd:SRA crystal is very promising for high-performance laser generation.
diode pump Nd:SRA crystal continuous-wave operation passively Q-switched operation 
Chinese Optics Letters
2022, 20(3): 031401

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