Ge掺杂β-Ga2O3晶体的发光性能研究
[1] Lecoq P, Schussler M, Schneegans M. Progress and prospects in the development of new scintillators for future high energy physics experiments[J].Nuclear Instruments and Methods in Physics Research Section A: Accelerators,Spectrometers,Detectors and Associated Equipment,1992,315(1-3): 337-343.
[2] Ishii M, Kobaysahi M. Single crystals for radiation detectors[J].Progress in Crystal Growth and Characterization of Materials,1991,23: 245-311.
[3] Shao Y P. A new timing model for calculating the intrinsic timing resolution of a scintillator detector[J].Physics in Medicine and Biology,2007,52(4): 1103-1117.
[4] Minniti T, Watanabe K, Burca G, et al. Characterization of the new neutron imaging and materials science facility IMAT[J].Nuclear Instruments & Methods in Physics Research. Section A,Accelerators,Spectrometers,Detectors and Associated Equipment,2018,888(21): 184-195.
[5] Yanagida T, Yoshikawa A, Yokota Y, et al. Development of Pr∶LuAG scintillator array and assembly for positron emission mammography[J].IEEE Transactions on Nuclear Science,2010,57(3): 1492-1495.
[6] Kobayashi M, Omata K, Sugimoto S, et al. Scintillation characteristics of CsPbCl3 single crystals[J].Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2008,592(3): 369-373.
[7] Derenzo S E, Weber M J, Klintenberg M K. Temperature dependence of the fast, near-band-edge scintillation from CuI, HgI2, PbI2, ZnO∶Ga and CdS∶In[J].Nuclear Instruments & Methods in Physics Research, Section A, (Accelerators,Spectrometers,Detectors and Associated Equipment),2002,486(1-2): 214-219.
[8] Bartic M, Baban C I, Suzuki H, et al. β-Gallium oxide as oxygen gas sensors at a high temperature[J]. Journal of the American Ceramic Society,2007,90(9): 2879-2884.
[9] Guo D Y, Wu Z P, An Y H, et al. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors[J].Applied Physics Letters,2014,105(2): 023507.
[10] Higashiwaki M, Sasaki K, Kamimura T, et al. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics[J].Applied Physics Letters, 2013,103(12): 013504.
[11] Singh P A, Krishnamoorthy S, Vishnu S, et al. High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector[J].Applied Physics Letters,110(22): 221107.
[12] Lu X, Zhou L D, Chen L, et al. Schottky X-ray detectors based on a bulk beta-Ga2O3 substrate[J].Applied Physics Letters,2018,112(10): 103502.
[13] Yanagida T, Okada G, Kato T, et al. Fast and high light yield scintillation in the Ga2O3 semiconductor material[J].Applied Physics Express,2016,9(4): 042601.
[14] Yu Y S, Kim G Y, Min B H, et al. Optical characteristics of Ge doped ZnO compound[J].Journal of the European Ceramic Society,2004,24(6): 1865-1868.
[15] Pal U, Fernandez P, Piqueras J, et al. Cathodoluminescence characterization of Ge-doped CdTe crystals[J].Journal of Applied Physics,1995,78(3): 1992-0.
[16] Rao R, Rao A M, Xu B, et al. Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires[J].Journal of applied physics 2005,98(9): 094312.
[17] Onuma T, Fujioka S, Yamaguchi T. et al. Polarized Raman spectra in β-Ga2O3 single crystals[J].Journal of Crystal Growth,2014,401: 330-333.
[18] Ueda N, Hosono H, Waseda R, et al. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals[J].Applied Physics Letters,1997,70(26): 3561-3563.
[19] Tang H L, He N T, Zhu Z C, et al. Temperature-dependence of X-ray excited luminescence of β-Ga2O3 single crystals[J].Applied Physics Letters,2019,115(7): 071904.
[20] Xiao H L, Shao G Q, Sai Q L, et al. Wide bandgap engineering of β-(Al, Ga)2O3 mixed crystals[J].Journal of Inorganic Materials,2016,31(11): 1258-1262.
[21] Dakhel A A. Structural, optical, and opto-dielectric properties of W-doped Ga2O3 thin films[J].Journal of Materials Science,2012,47(7): 3034-3039.
[22] Chen Z W, Wang X, Noda S J, et al. Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films[J].Superlattices and Microstructures,2016,90: 207-214.
[23] Yamaguchi K J. First principles study on electronic structure of β-Ga2O3[J].Solid State Communications,2004,131(12): 739-744.
[24] Encarnación G. Víllora, Yamaga M, Inoue T, et al. Optical spectroscopy study on β-Ga2O3[J].Japanese Journal of Applied Physics,2002,41(Part 2): L622-L625.
[25] Yamaoka, Suguru, Nakayama, Masaaki. Evidence for formation of self-trapped excitons in a β-Ga2O3 single crystal[J]. Physica Status Solidi,13(2-3): 93-96.
[26] Reshchikov M A, Morkoc H. Luminescence properties of defects in GaN[J]. Journal of Applied Physics, 2005, 97(6): 61301.
[27] Xin B, Peng B, Dong L P, et al. Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3[J].Scientific Reports,2017,7: 40160.
[28] He N T, Tang H L, Liu B, et al. Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method[J].Nuclear Instruments & Methods in Physics Research,2018,888: 9-12
[29] Usui Y K, Tomohisa O, Okada G, et al. Ce-doped Ga2O3 single crystalline semiconductor showing scintillation features[J].Optik- International Journal for Light and Electron Optics,2017,143: 150-157.
何诺天, 唐慧丽, 刘波, 张浩, 朱智超, 赵衡煜, 徐军. Ge掺杂β-Ga2O3晶体的发光性能研究[J]. 人工晶体学报, 2020, 49(8): 1534. HE Nuotian, TANG Huili, LIU Bo, ZHANG Hao, ZHU Zhichao, ZHAO Hengyu, XU Jun. Study on the Luminescence Properties of Ge-doped β-Ga2O3 Crystals[J]. Journal of Synthetic Crystals, 2020, 49(8): 1534.