液晶与显示, 2016, 31 (12): 1112, 网络出版: 2016-12-30
排气方式及工艺参数对等离子体刻蚀a-Si均一性的影响
Influence of exhaust mode and process on uniformity of plasma etching a-Si
补充材料
张立祥, 王海涛, 王尤海, 夏庆峰. 排气方式及工艺参数对等离子体刻蚀a-Si均一性的影响[J]. 液晶与显示, 2016, 31(12): 1112. ZhANG Li-xiang, WANG Hai-tao, WANG You-hai, XIA Qing-feng. Influence of exhaust mode and process on uniformity of plasma etching a-Si[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(12): 1112.