发光学报, 2011, 32 (2): 164, 网络出版: 2011-02-21
InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响
Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells
补充材料
叶志成, 舒永春, 曹雪, 龚亮, 姚江宏, 皮彪, 邢晓东, 许京军. InxGa1-xAs/GaAs量子阱应变量对变温光致发光谱的影响[J]. 发光学报, 2011, 32(2): 164. YE Zhi-cheng, SHU Yong-chun, CAO Xue, GONG Liang, YAO Jiang-hong, PI Biao, XING Xiao-dong, XU Jing-jun. Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells[J]. Chinese Journal of Luminescence, 2011, 32(2): 164.