强激光与粒子束, 2014, 26 (8): 084003, 网络出版: 2014-07-30
γ辐照前后多栅NMOS转移特性曲线交叉现象机理分析
Mechanism of crossover of transconductance curves in 0.5 μm multi-finger NMOS FETs before and after γ irradiation
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潘立丁, 石瑞英, 龚敏, 刘杰. γ辐照前后多栅NMOS转移特性曲线交叉现象机理分析[J]. 强激光与粒子束, 2014, 26(8): 084003. Pan Liding, Shi Ruiying, Gong Min, Liu Jie. Mechanism of crossover of transconductance curves in 0.5 μm multi-finger NMOS FETs before and after γ irradiation[J]. High Power Laser and Particle Beams, 2014, 26(8): 084003.