[1] Schwank J R, Shaneyfelt M R, Fleetwood D M. Radiation effects in MOS oxides[J]. Nuclear Science, 2008, 55(4): 1425-1430.

[2] Hong Genshen, Xiao Zhiqiang, Gao Xiangdong, et al. Total dose radiation characteristics of SOI MOSFET[J]. Electronics & Packaging, 2009, 9(2): 32-34.

[3] 丁李利, 郭红霞, 王忠明, 等. CMOS电路总剂量效应最劣偏置甄别[J]. 强激光与粒子束, 2012, 24(11): 2757-2762. (Ding Lili, Guo Hongxia, Wang Zhongming, et al. Identification of worst-case bias condition for total ionizing dose effect of CMOS circuits. High Power Laser and Particle Beams, 2012, 24(11): 2757-2762)

[4] Wang Jing, Wang Wenhua, Huang Ru, et al. Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration[J]. Microelectronics Reliability, 2010, 50(1): 1094-1097.

[5] Li Dongmei, Huangfu Liying, Gou Qiujing, et al. Total ionizing dose radiation effects on MOS transistors with different layouts[J]. Chinese Journal of Semiconductors, 2007, 28(2): 171-175.

[6] De Lima J A, Silveira M A G, Cirne K H, et al. X-ray radiation effects in overlapping circular-gate MOSFET’s[C]//Proc of RADECS. 2011: 88-91.

[7] Siu S L, Tam W S, Wong H, et al. Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors[J]. Microelectronics Reliability, 2012, 52(8): 1606-1609.

[8] Liu Shiyao, He Wei, Cao Jianmin, et al. The total ionizing dose effects of non-planar triple-gate transistors[J]. Journal of Semiconductors, 2013, 34: 094004.

[9] 韦源, 谢红刚, 贡顶, 等. 金属氧化物半导体场效应管长期辐射效应的数值模拟[J]. 强激光与粒子束, 2013, 25(4): 1031-1034. (Wei Yuan, Xie Honggang, Gong Ding, et al. Numerical simulation of long-term radiation effects for MOSFETs. High Power Laser and Particle Beams, 2013, 25(4): 1031-1034)

[10] 耿长冉, 汤晓斌, 谢芹, 等. 空间辐射环境及人体剂量蒙特卡罗模拟[J]. 强激光与粒子束, 2012, 24(12): 3028-3032. (Geng Changran, Tang Xiaobin, Xie Qin, et al. Space radiation environment and human dose calculation based on Monte Carlo method. High Power Laser and Particle Beams, 2012, 24(12): 3028-3032)

[11] Rougieux F E, Macdonald D, Cuevas A, et al. Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon[J]. Journal of Applied Physics, 2010, 108: 013706.

[12] Chen Duan, Wei Guowei. Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices[J]. Journal of Computational Physics, 2010, 229(12): 4431-4460.

[13] Alessandrini M, Esseni D, Fiegna C. Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs[J]. Solid-State Electronics, 2004, 48(4): 589-595.

[14] Michael S. A novel technique for modeling radiation effects in solar cells utilizing SILVACO virtual wafer fabrication software[C]//Proc of RADECS. 2005.

[15] Liu Shiyao, He Wei, Cao Jianmin, et al. Total ionizing dose effects on triple-gate FETs[C]//Proc of ICSICT. 2012: 1-3.

[16] Garcia-Moreno E, Picos R, Isern E, et al. CMOS current source based radiation sensors[C]//Proc of ICSICT. 2010: 1380-1383.

[17] Barnaby H J, Mclain M L, Esqueda I S, et al. Modeling ionizing radiation effects in solid state materials and CMOS devices[J]. Transactions on Circuits and Systems, 2009, 56(8): 1870-1883.

[18] Ohyama H, Hayama K, Takakura K, et al. effect of irradiation temperature on radiation damage in electron-irradiated MOS FETs[J]. Microelectronic Engineering, 2003, 66(1): 530-535.