915 nm半导体激光器新型腔面钝化工艺
[1] 王立军, 彭航宇, 张俊, 等. 高功率高亮度半导体激光器合束进展[J]. 红外与激光工程, 2017, 46(4): 0401001.
[2] 徐正文, 曲轶, 王钰智, 等. 高功率980 nm非对称宽波导半导体激光器设计[J].红外与激光工程, 2014, 43(4): 1094-1098.
Xu Zhengwen, Qu Yi, Wang Yuzhi, et al. Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers[J]. Infrared and Laser Engineering, 2014, 43(4): 1094-1098. (in Chinese)
[3] 李峙, 尧舜, 高祥宇, 等. 半导体激光器堆栈快轴光束质量计算的研究[J]. 红外与激光工程, 2015, 44(1): 85-90.
[4] 李再金, 胡黎明, 王烨, 等. 808 nm掺铝半导体激光高损伤阈值腔面膜制备[J]. 红外与激光工程, 2010, 39(6): 1034-1037.
Li Zaijin, Hu Liming, Wang Ye, et al. Fabrication of 808 nm Al-containing semiconductor laser diode high damage threshold facet coating[J]. Infrared and Laser Engineering, 2010, 39(6): 1034-1037. (in Chinese)
[5] 海一娜, 邹永刚, 田锟, 等. 水平腔面发射半导体激光器研究进展[J]. 中国光学, 2017, 10(2): 195-206.
Hai Yina, Zou Yonggang, Tian Kun, et al. Research progress of horizontal cavity surface emitting semiconductor lasers[J].Chinese Optics, 2017, 10(2): 195-206. (in Chinese)
[6] 刘友强, 曹银花, 李景, 等. 激光加工用5 kW光纤耦合半导体激光器[J]. 光学 精密工程, 2015, 23(5): 1279-1287.
[7] 朱洪波, 郝明明, 刘云, 等. 808 nm高亮度半导体激光器光纤耦合器件[J]. 光学 精密工程, 2012, 20(8): 1684-1689.
[8] 吴华玲, 郭林辉, 余俊宏, 等. 500 W半导体激光器光纤耦合输出模块设计[J]. 红外与激光工程, 2017, 46(10): 1005005.
[9] 孔真真, 崔碧峰, 黄欣竹, 等. 大功率半导体激光器性能改善的研究[J]. 激光与光电子学进展, 2017, 54: 071403.
Kong Zhenzhen, Cui Bifeng, Huang Xinzhu, et al. Study on performance improvement of high power semiconductor lasers[J]. Laser & Optoelectronics Progress, 2017, 54: 071403. (in Chinese)
[10] 何新, 崔碧峰, 刘梦涵, 等. 大功率半导体激光器腔面氮钝化的研究[J]. 激光与红外, 2016, 46(7): 805-808.
He Xin, Cui Bifeng, Liu Menghan. Research on nitrogen passivation for high power semiconductor lasers [J]. Laser & Infrared, 2016, 46(7): 805-808. (in Chinese)
[11] 刘斌, 刘媛媛, 崔碧峰, 等. 980半导体激光器长期老化结果及失效分析[J]. 激光与光电子学进展, 2012, 49: 091404.
Liu Bin, Liu Yuanyuan, Cui Bifeng. Long-term aging and failure analysis for 980 nm laser diodes[J]. Laser & Optoelectronics Progress, 2012, 49: 091404. (in Chinese)
[12] Christofer S, Yangting S, Peter B, et al. Nitride facet passivation raises reliability, COMD and enables high temperature operation of InGaAsP, InGaAs and InAlGaAs lasers[C]//SPIE, 2005, 5711: 189-200.
[13] Brennan B, Milojevic M, Hinkle C L, et al. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As[J]. Applied Surface Science, 2011, 257: 4082-4090.
[14] Chand N, Hobson W S, De Jong J F. ZnSe for mirror passiwation of high power GaAs based lasers[J]. Electronics Letter, 1996, 32(17): 1595-1596.
[15] Ziegler M, Tomm W, Elsaesser T. Imaging catastrophic optical mirror damage in high-power diode lasers[J]. Journal of Electronic Materials, 2010, 39(6): 709-714.
[16] Souto J, Pura J L, Torres A. Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes[J]. Microelectronics Reliability, 2016, 64: 627-630.
[17] Gong Xueqin, Feng Shiwei, Yang Hongwei. Degradation analysis of facet coating in GaAs-based high-power laser diodes[J]. IEEE Transactions on Device and Materials Reliability, 2015, 15(3): 359-362.
王鑫, 朱凌妮, 赵懿昊, 孔金霞, 王翠鸾, 熊聪, 马骁宇, 刘素平. 915 nm半导体激光器新型腔面钝化工艺[J]. 红外与激光工程, 2019, 48(1): 0105002. Wang Xin, Zhu Lingni, Zhao Yihao, Kong Jinxia, Wang Cuiluan, Xiong Cong, Ma Xiaoyu, Liu Suping. 915 nm semiconductor laser new type facet passivation technology[J]. Infrared and Laser Engineering, 2019, 48(1): 0105002.