Al掺杂浓度对CrSi2电子结构及光学性质的影响 下载: 527次
闫万珺, 周士芸, 谢泉, 郭本华, 张春红, 张忠政. Al掺杂浓度对CrSi2电子结构及光学性质的影响[J]. 光学学报, 2012, 32(5): 0516003.
Yan Wanjun, Zhou Shiyun, Xie Quan, Guo Benhua, Zhang Chunhong, Zhang Zhongzheng. Effect of Al Doping Concentration on Electronic and Optical Properties of CrSi2[J]. Acta Optica Sinica, 2012, 32(5): 0516003.
[1] S. P. Murarka. Silicides for VLSI Applications [M]. New York: Academic Press, 1983. 172~175
[2] M. C. Bost, J. E. Mahan. Summary Abstract: Semiconducting silicides as potential materials for electro-optic very large scale integrated circuit Interconnect [J]. J. Vac. Sci. Technol. B, 1986, 4(6): 1336~1338
[3] V. E. Borisenko. Semiconducting Silicides [M]. Berlin: Springer-Verlag New York, LLC, 2000
[4] N. G. Galkin, T. A. Velichko, S. V. Skripka et al.. Semiconducting and structural properties of CrSi2 A-type epitaxial films on Si (111) [J]. Thin Solid Films, 1996, 280(1-2): 211~220
[5] D. B. Migas, L. Miglio. Band-gap modifications of β-FeSi2 with lattice distortions corresponding to the epitaxial relationships on Si(111) [J]. Phys. Rev. B, 2000, 62(16): 11063~11070
[6] E. N. Nikitin. Thermoelectric properties of the silicon-chromium system [J]. Sov. Phys.-Solid State, 1961, 2(11): 2389~2392
[7] D. Shinoda, S. Asanabe, Y. Sasaki. Semiconducting properties of chromium disilicide [J]. J. Phys. Soc. Jpn., 1964, 19(3): 269~272
[8] T. Tokushima, I. Nishida, K. Sakata et al.. The CrSi2-CoSi thermomodule and its applications[J]. J. Mater. Sci., 1969, 4(11): 978~984
[9] I. Nishida. The crystal growth and thermoelectric properties of chromium disilicide[J]. J. Mater. Sci., 1972, 7(10): 1119~1124
[10] I. Nishida, T. Sakata. Semiconducting properties of pure and Mn-doped chromium disilicides [J]. J. Phys. Chem. Solids, 1978, 39(5): 499~505
[11] H. Hohl, A. P. Ramirez, T. T. M. Palstra et al.. Thermoelectric and magnetic properties of Cr1-xVxSi2 solid solutions[J]. J. Alloys Comp., 1997, 248: 70~76
[12] L. F. Mattheiss. Structural effect s on t he calculated semiconductor gap of CrSi2 [J]. Phy. Rev. B, 1991, 43(2): 1863~1866
[13] D. Decker, E. Loos, Chr. Drobniewski et al.. Structure and properties of CrSi2/Si multilayers[J]. Microelectron. Engng., 2004, 76(1-4): 331~335
[14] S. Y. Zhou, Q. Xie, W. J. Yan et al.. First-principles study on the electronic structure and optical properties of CrSi2 [J]. Sci .China Ser G-Phys. Mech. Astron., 2009, 52(1): 46~51
[15] S. Y. Zhou, Q. Xie, W. J. Yan et al.. First-principles study on the electronic structure of stressed CrSi2 [J]. Sci. China Ser. G-Phys. Mech. Astron., 2009, 52(1): 76~81
[16] Z. J. Pan, L. T. Zhang, J. S. Wu. Effect s of Al doping on the transport performances of CrSi2 single crystals[J]. Scripta Mater., 2007, 56(3): 245~248
[17] Z. J. Pan, L. T. Zhang, J. S. Wu. Effect s of V-doping on the transport performances of CrSi2 single crystals[J]. Scripta Mater., 2007, 56(4): 257~260
[18] 周士芸, 谢泉, 闫万珺 等. 锰掺杂二硅化铬电子结构和光学性质的第一性原理计算[J]. 光学学报, 2009, 29(10): 2848~2853
[19] 周士芸, 谢泉, 闫万珺 等. V掺杂CrSi2能带结构的第1性原理计算[J]. 云南大学学报(自然科学版), 2009, 31(5): 484~488
Zhou Shiyun, Xie Quan, Yan Wanjun et al.. First-principles calculation of the band structure of V-doped CrSi2 [J]. J. Yunnan University, 2009, 31(5): 484~488
[20] 张富春, 邓周虎, 阎军锋 等. ZnO电子结构与光学性质的第一性原理计算[J]. 光学学报, 2006, 26(8): 1203~1209
[21] 张富春, 张志勇, 张威虎 等. AZO(ZnOAl)电子结构与光学性质的第一性原理计算[J]. 光学学报, 2009, 29(4): 1025~1031
[22] 向东, 刘波, 顾牡 等. YTaO4和LuTaO4电子结构和光学性质的理论计算[J]. 光学学报, 2009, 29(2): 448~453
[23] 闫万珺, 周士芸, 谢泉 等. Co掺杂β-FeSi2电子结构及光学性质的第一性原理研究[J]. 光学学报, 2011, 31(6): 0616003
[24] 陈茜, 谢泉, 杨创华 等. 掺杂Mg2Si电子结构及光学性质的第一性原理计算[J]. 光学学报, 2009, 29(1): 229~235
[25] 蔡建秋, 陶向明, 罗海军 等. Sr2RuO4各向异性光学性质的第一性原理研究[J]. 光学学报, 2010, 30(12): 222~227
Cai Jianqiu, Tao Xiangming, Luo Haijun et al.. Ab-initio investigation of anisotropic optical properties of Sr2RuO4[J]. Acta Optica Sinica, 2010, 30(12): 222~227
[26] 李春霞, 党随虎, 韩培德. 空位缺陷对CdS电子结构和光学性质的影响[J]. 光学学报, 2010, 30(5): 198~204
Li Chunxia, Dang Suihu, Han Peide. Vacancies effects on electronic structure and optical properties of CdS[J]. Acta Optica Sinica, 2010, 30(5): 198~204
[27] 李春霞, 党随虎, 张可言 等. 压力效应对CdS电子结构和光学性质的影响[J]. 光学学报, 2011, 31(6): 0616004
[28] M. D. Segall, J. D. Lindan Philip, M. J. Probert et al.. First-principles simulation: ideas, illustrations and the CASTEP code[J]. J. Phys. Cond. Matt., 2002, 14(11): 2717~2744
[29] C. G. Broyden. The convergence of a class of double-rank minimization algorithms, the new algorithm[J]. J. Inst. for Math. & Appl., 1970, 6: 222~231
[30] R. Fletcher. A new approach to variable metric algorithms[J]. Comput. J., 1970, 13(3): 317~322
[31] D. Goldfarb. A family of variable metric methods derived by variational means[J]. Math. Comput., 1970, 24(109): 23~26
[32] D. F. Shanno. Conditioning of quasi-newton methods for function minimization[J]. Math. Comput., 1970, 24 (111): 647~656
[33] J. P. Perdew, K. Burke, M. Ernzerhof. Generalized gradient approximation made simple[J]. Phys. Rev. Lett., 1996, 77(18): 3865~3868
[34] D. Vanderbilt. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism[J]. Phys. Rev. B, 1990, 41(11): 7892~7895
[35] H. J. Monkhorst, J. D. Pack. Special point s for Brillouin-zone integrations[J]. Phys. Rev. B, 1976, 13(12): 5188~5192
[36] V. L. Shaposhnikov, A. V. Krivosheeva, A. E. Krivosheev et al.. Effect of stresses in electronic properties of chromium disilicide[J]. Micro-Electr Engng., 2002, 64(1-4): 219~223
[37] A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko. Electronic structure of stressed CrSi2 [J]. Mater Sci. Engng. B, 2003, 101(1-3): 309~312
[38] M. C. Bost, J. E. Mahan. An investigation of the optical constants and band gap of chromium disilicide[J]. J. Appl. Phys., 1988, 63(3): 839~844
[39] V. Bellani, G. Guizzetti, F. Marabelli et al.. Theory and experiment on the optical properties of CrSi2 [J]. Phys. Rev. B, 1992, 46(15): 9380~9389
[40] 沈学础. 半导体光谱和光学性质[M]. 北京:科学出版社(第二版), 1992. 76~94
Shen Xuechu. Semiconductor Spectra and Optical Properties [M]. Beijing: Science Press (The Second Edition), 1992. 76~94
[41] 方容川. 固体光谱学[M]. 合肥:中国科学技术出版社, 2001. 71~75
Fang Rongchuan. Solid-State Spectroscopy [M]. Hefei: China Science and Technology Press, 2001. 71~75
闫万珺, 周士芸, 谢泉, 郭本华, 张春红, 张忠政. Al掺杂浓度对CrSi2电子结构及光学性质的影响[J]. 光学学报, 2012, 32(5): 0516003. Yan Wanjun, Zhou Shiyun, Xie Quan, Guo Benhua, Zhang Chunhong, Zhang Zhongzheng. Effect of Al Doping Concentration on Electronic and Optical Properties of CrSi2[J]. Acta Optica Sinica, 2012, 32(5): 0516003.