光电子技术, 2013, 33 (3): 194, 网络出版: 2014-01-16   

近红外响应的III-V族半导体光电阴极材料及工艺

Material and Fabrication Process of Near Infrared Response III-V Compound Semiconductor Photocathode
作者单位
中国电子科技集团公司 第五十五研究所, 南京 210016
引用该论文

王旺平, 马建一. 近红外响应的III-V族半导体光电阴极材料及工艺[J]. 光电子技术, 2013, 33(3): 194.

Wang Wangping, Ma Jianyi. Material and Fabrication Process of Near Infrared Response III-V Compound Semiconductor Photocathode[J]. Optoelectronic Technology, 2013, 33(3): 194.

参考文献

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王旺平, 马建一. 近红外响应的III-V族半导体光电阴极材料及工艺[J]. 光电子技术, 2013, 33(3): 194. Wang Wangping, Ma Jianyi. Material and Fabrication Process of Near Infrared Response III-V Compound Semiconductor Photocathode[J]. Optoelectronic Technology, 2013, 33(3): 194.

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