近红外响应的III-V族半导体光电阴极材料及工艺

王旺平; 马建一

光电子技术, 2013, 33 (3): 194, 网络出版: 2014-01-16

近红外响应的III-V族半导体光电阴极材料及工艺

Material and Fabrication Process of Near Infrared Response III-V Compound Semiconductor Photocathode

论文大纲

王旺平 ^*马建一

作者单位

中国电子科技集团公司第五十五研究所, 南京 210016

负电子亲和势光电阴极转移电子光阴极 negative electron affinity photocathode transferred electron photocathode GaAs GaAs InGaAs InGaAs InGaAsP InGaAsP

摘要

随着GaAs负电子亲和势(NEA)半导体光电阴极在我国的成熟和应用,半导体光电阴极的进一步研究将往更长波的近红外发展。针对透射式半导体光电阴极器件,系统总结了近红外波段响应良好的GaAs、InGaAs、InGaAsP Ⅲ-V族外延材料特性及相应商业化产品的应用领域和性能。通过文献调研本文进一步归纳了不同波段NEA光电阴极和转移电子光阴极适用的材料结构,并结合传统GaAs NEA光电阴极工艺讨论了InGaAs、InGaAsP材料及阴极工艺的难点。

Abstract

With the maturity of GaAs negative electron affinity (NEA) photocathode in China, the research on semiconductor photocathode will move forward to longer near infrared wavelength. The property and device performance of III-V epitaxial material with high infrared response: GaAs, InGaAs and InGaAsP are compared. Suitable NEA and transferred-electron photocathode structure for different infrared wavelength detection are summarized and the key point in fabrication of InGaAs and InGaAsP photocathode is discussed.

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王旺平, 马建一. 近红外响应的III-V族半导体光电阴极材料及工艺[J]. 光电子技术, 2013, 33(3): 194. Wang Wangping, Ma Jianyi. Material and Fabrication Process of Near Infrared Response III-V Compound Semiconductor Photocathode[J]. Optoelectronic Technology, 2013, 33(3): 194.

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