溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

祐卫国; 张勇; 李璟; 杨峰; CHENG C H; 赵勇

发光学报, 2010, 31 (4): 503, 网络出版: 2010-08-31

溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering

论文大纲

祐卫国 ^1,*张勇 ¹李璟 ¹杨峰 ¹CHENG C H ²赵勇 ^1,2

作者单位

¹ 西南交通大学超导研究开发中心材料先进技术教育部重点实验室, 四川成都 610031

² School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia

ZnO薄膜射频反应磁控溅射溅射压强氩氧比光致发光 ZnO films RF reactive magnetron sputtering sputtering pressure argon-oxygen ratio photoluminescence

摘要

用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜, 通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示, 所制备的ZnO薄膜为六角纤锌矿结构, 具有沿c轴的择优取向; 溅射压强P=0.6 Pa, 氩氧比Ar/O2=20/5.5 sccm时, (002)晶面衍射峰强度和平均晶粒尺寸较大, (O02)XRD峰半峰全宽(FWHM)最小, 光致发光紫外峰强度最强。

Abstract

Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and F-7100 photoluminescence (PL) spectroscopy. The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates．When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O2=20/5.5 sccm, the (002) plane diffraction peak intensity and the grain size are larger, the FWHM of (002) peak is the smallest, UV photoluminescence peak intensity is the strongest.

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祐卫国, 张勇, 李璟, 杨峰, CHENG C H, 赵勇. 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J]. 发光学报, 2010, 31(4): 503. YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2010, 31(4): 503.

溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

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