激光与光电子学进展, 2018, 55 (5): 051603, 网络出版: 2018-09-11
快速热退火对GaAs/AlGaAs量子阱材料结构及发光特性的影响 下载: 1532次
Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells
图 & 表
图 2. (a)不同样品的XRD图;(b)不同退火温度下样品的+1级衍射峰强度和FWHM
Fig. 2. (a) XRD patterns of different samples; (b) FWHM and +1 diffraction peak intensity of samples under different annealing temperatures
图 3. 不同样品的PL扫描测试结果。(a)发光强度;(b) FWHM
Fig. 3. PL scanning test results of different samples. (a) Luminous intensity; (b) FWHM
图 4. 室温下未处理样品和RTA处理样品的PL谱对比
Fig. 4. PL spectrum comparison between untreated sample and RTA treated samples at room temperature
智民, 方铉, 牛守柱, 房丹, 唐吉龙, 王登魁, 王新伟, 王晓华, 魏志鹏. 快速热退火对GaAs/AlGaAs量子阱材料结构及发光特性的影响[J]. 激光与光电子学进展, 2018, 55(5): 051603. Min Zhi, Xuan Fang, Shouzhu Niu, Dan Fang, Jilong Tang, Dengkui Wang, Xinwei Wang, Xiaohua Wang, Zhipeng Wei. Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells[J]. Laser & Optoelectronics Progress, 2018, 55(5): 051603.