激光化学液相次序选择腐蚀新方法
[1] . Tisone, A. Wayne Johnson. Laser-controlled etching of chromium-doped 〈100〉 GaAs[J]. Appl. Phys. Lett., 1983, 42(6): 530-532.
[2] . . Laser-induced trench etching of GaAs in aqueous KOH solution[J]. Appl. Phys., 1990, 51(4): 340-343.
[3] . J. von Gutfeld, R. T. Hodgson. Laser enhanced etching in KOH[J]. Appl. Phys. Lett., 1982, 40(4): 352-354.
[4] . M. Lum, F. W. Ostermayer, Jr., P. A. Kohl et al.. Improvements in the modulation amplitude of submicron gratings produced in n-InP by direct photoelectrochemical etching[J]. Appl. Phys. Lett., 1985, 47(3): 269-271.
[5] . S. Minsky, M. White, E. L. Hu. Room-temperature photoenhanced wet etching of GaN[J]. Appl. Phys. Lett., 1996, 68(11): 1531-1533.
[6] . Mailis, G. W. Ross, L. Reekie et al.. Fabrication of surface relief gratings on lithium niobate by combined UV laser and wet etching[J]. Electron. Lett., 2000, 36(21): 1801-1803.
[7] . Brown. Laser-assisted selective chemical etching for active trimming of GaAs waveguide devices[J]. IEEE Photon. Technol. Lett., 1990, 2(5): 346-348.
[8] . Podlesnik, Heinz H. Gilgen, Richard M. Osgood, Jr.. Waveguiding effects in laser-induced aqueous etching of semiconductors[J]. Appl. Phys. Lett., 1986, 48(7): 496-498.
[9] . Angulo Barrios, E. Rodriguez, M. Holmgren et al.. GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP:Fe regrowth[J]. Electrochemical and Solid-State Letters, 2000, 3(9): 439-441.
刘霖, 叶玉堂, 刘娟秀, 赵素英, 范超, 吴云峰, 王昱琳. 激光化学液相次序选择腐蚀新方法[J]. 中国激光, 2006, 33(1): 49. 刘霖, 叶玉堂, 刘娟秀, 赵素英, 范超, 吴云峰, 王昱琳. A New Order-Selective Etching Method in Laser Induced Wet-Chemical Etching[J]. Chinese Journal of Lasers, 2006, 33(1): 49.