射频等离子硫钝化GaAs(100)的表面特性

许留洋; 高欣; 袁绪泽; 夏晓宇; 曹曦文; 乔忠良; 薄报学

doi:doi:10.3788/fgxb20163705.0556

发光学报, 2016, 37 (5): 556, 网络出版: 2016-05-11

射频等离子硫钝化GaAs(100)的表面特性

RF Sulfur-plasma Passivation of GaAs(100) Surface

论文大纲

许留洋 ^*高欣袁绪泽夏晓宇曹曦文乔忠良薄报学

作者单位

长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022

射频等离子体光致发光钝化 RF plasma PL passivation GaAs GaAs

摘要

采用射频等离子方法,对GaAs(100)衬底片表面进行干法硫等离子体钝化,旨在得到性能稳定含硫钝化层。样品经过360 ℃温度条件下的快速热退火,光致发光（PL）测试表明,钝化后的样品PL强度上升了71%。同时,钝化样品的稳定性测试结果表明,样品放置在实验室空气中30 d,其PL强度未出现明显变化,说明GaAs的等离子体干法硫钝化具有较好的性能稳定性。

Abstract

Sulfur-plasma process was proposed to clean and passivate the surface of (100) oriented GaAs wafers for stable sulfur passivation effect. The photoluminescence (PL) intensity of processed samples with sulfur-plasma had an obvious improvement after 360 ℃ annealing, and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of GaAs surface treated by sulfur-plasma process has good stability.

参考文献

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许留洋, 高欣, 袁绪泽, 夏晓宇, 曹曦文, 乔忠良, 薄报学. 射频等离子硫钝化GaAs(100)的表面特性[J]. 发光学报, 2016, 37(5): 556. XU Liu-yang, GAO Xin, YUAN Xu-ze, XIA Xiao-yu, CAO Xi-wen, QIAO Zhong-liang, BO Bao-xue. RF Sulfur-plasma Passivation of GaAs(100) Surface[J]. Chinese Journal of Luminescence, 2016, 37(5): 556.

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