溅射沉积功率对PZT薄膜的组分、结构和性能的影响

李新曦; 赖珍荃; 王根水; 孙璟兰; 赵强; 褚君浩

红外与毫米波学报, 2004, 23 (4): 313, 网络出版: 2006-05-10

溅射沉积功率对PZT薄膜的组分、结构和性能的影响

INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING

论文大纲

李新曦 ¹赖珍荃 ¹王根水 ²孙璟兰 ²赵强 ²褚君浩 ²

作者单位

¹ 南昌大学,物理系,江西,南昌,330047

² 中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083

射频溅射沉积功率钙钛矿结构铁电薄膜 RF sputtering deposition power perovskite phase PZT PZT ferroelectric thin films

摘要

用射频(RF)溅射法在镀LaNiO₃(LNO)底电极的Si片上沉积PbZr_0.52Ti_0.48O₃(PZT)铁电薄膜,沉积过程中基底温度为370℃,然后在大气环境中对沉积的PZT薄膜样品进行快速热退火处理(650℃,5min).用电感耦合等离子体发射光谱(ICP-AES)测量其组分,X射线衍射(XRD)分析PZT薄膜的结晶结构和取向,扫描电子显微镜(SEM)分析薄膜的表面形貌和微结果,RT66A标准铁电综合测试系统分析Pt/PZT/LNO电容器的铁电与介质特性，结果表明,PZT薄膜的组分、结构和性能都与溅射沉积功率有关.

Abstract

PbZr_0.52Ti_0.48O₃(PZT) ferroelectric thin films were deposited on LaNiO₃ coated p-Si(111) substrates by RF magnetron sputtering at low substrate temperature( T =370℃) with deposition power ranging from 60W to 120W, sequentially followed by a rapid thermal annealing(RTA) process at temperature 650℃ for 5 minutes. The crystalline phase, microstructure, composition, and electrical properties of PZT thin films were investigated by X-ray diffraction(XRD), canning electron microscope(SEM), inductively coupled plasma-atom emission spectrometry (ICP-AES), four-probe meter and spectro-ellipsometer, respectively. It is found that the microstructure, composition and electrical properties of sputtered PZT thin films are highly dependent on the deposition power, i.e., the atom rate Pb(Zr+Ti) of PZT films and the leak-current of Pt/PZT/LNO capacitors increase as the deposition power increases, films deposited at low power are Pb-poor and present nonferroelectricity, while those deposited at high power are Pb-rich.Optimized deposition power is 80W.

参考文献

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李新曦, 赖珍荃, 王根水, 孙璟兰, 赵强, 褚君浩. 溅射沉积功率对PZT薄膜的组分、结构和性能的影响[J]. 红外与毫米波学报, 2004, 23(4): 313. 李新曦, 赖珍荃, 王根水, 孙璟兰, 赵强, 褚君浩. INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 313.

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