偏置条件对双极晶体管位移辐射损伤的影响
刘莉, 董磊, 刘超铭, 李兴冀, 杨剑群, 马国亮. 偏置条件对双极晶体管位移辐射损伤的影响[J]. 太赫兹科学与电子信息学报, 2017, 15(5): 874.
LIU Li, DONG Lei, LIU Chaoming, LI Xingji, YANG Jianqun, MA Guoliang. Effect of displacement radiation damage on bipolar junction transistors under various bias conditions[J]. Journal of terahertz science and electronic information technology, 2017, 15(5): 874.
[1] MINSON E,SANCHEZ I,BARNABY H J,et al. Assessment of gated sweep technique for total dose and dose rate analysis in bipolar oxides[J]. IEEE Trans. Nucl. Sci., 2004(51):3723-3729.
[2] SUMMERSS G P,BURKE E A,DALE C J,et al. Correlation of particle-induced displacement damage in silicon[J]. IEEE Trans. Nucl. Sci., 1987(34):1133-1139.
[3] KOSIER S L,SCHRIMPF R D,Nowlin R N,et al. Charge separation for bipolar transistors[J]. IEEE Trans. Nucl. Sci., 1993(40): 1276-1285.
[4] LIU C M,LI X J,GENG H B,et al.Incident particle range dependence of radiation damage in a power bipolar junction transistor[J]. Chinese Physics B, 2012(10):308-312.
[5] LI X J,LIU C M,YANG J Q. Synergistic effect of ionization and displacement damage in NPN transistors caused by protons with various energies[J]. IEEE Trans. Nucl. Sci., 2015(62):1375-1382.
[6] MADHU K V,KULKARNI S R,RAVINDRA M,et al.DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor[J]. Nucl. Instr. and Meth. B, 2007(254):98-104.
[7] GENG H B,LAN M J,LIU C M,et al.Radiation effects on silicon bipolar transistors caused by 3-10 MeV protons and 20-60 MeV bromine ions[J]. Physica B Condensed Matter, 2010(405):1489-1494.
[8] BARNABY H J,SMITH S K,SCHRIMPFR D,et al. Analytical model for proton radiation effects in bipolar devices[J]. IEEE Trans. Nucl. Sci., 2002(49):2643-2649.
[9] KULKARNI S R,RAVINDRA M,JOSHI G R,et al. Simulation of energy and fluence dependence of heavy ion induced displacement damage factor in bipolar junction transistor[J]. Radiation Effects & Defects in Solids, 2004(159):273-280.
[10] LIU C M,LI X J,GENG H B,et al. The equivalence of displacement damage in silicon bipolar junction transistors[J]. Nucl. Instr. and Meth. A, 2012(677):61-67.
[11] LIU C M,LI X J,GENG H B,et al.Ionization damage in NPN transistors caused by lower energy electrons[J]. Nucl. Instr. and Meth. A, 2010(621):707-712.
[12] CELLERE G,PACCAGNELLA A,LARCHER L,et al.Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation[J]. IEEE Trans. on Nucl. Sci, 2002(49):3051-3058.
[13] PERSHENKOV V S,CHUMAKOV K A,NIKIFOROV A Y,et al. Interface trap model for the low-dose-rate effect in bipolar devices[J]. IEEE 9th Radiation and Its Effects on Components and Systems, 2007.
[14] LIU C M,LI X J,GENG H B,et al. DLTS studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions[J]. Nucl.Instr. and Meth. A, 2012(688):7-10.
[15] CHAVEZ R M,RAX B G,JOHNSTON A H. Total ionizing dose effects and bias dependence in selected bipolar devices[J]. Radiation Effects Data Workshop, IEEE, 2007:50-56.
[16] SIEDLE A H,ADAMS L. Handbook of Radiation Effects[M]. New York:Oxford University Press, 1993.
[17] LANG D V. Fast capacitance transient appartus:application to ZnO and O centers in GaP p-n junctions[J]. Journal of Applied Physics, 1974(45):3014-3022.
[18] MADHU K V,KULKARNI S R,RAVINDRA M,et al. DLTS study of deep level defects in Li-ion irradiated bipolar junction transistor[J]. Nucl. Instr. and Meth. B, 2007(254):98-104.
[19] BIELEJEC E,VIZKELETHY G,FLEMING R M,et al. Metrics for comparison between displacement damage due to ion beam and neutron irradiation in silicon BJTs[J]. IEEE Trans. Nucl. Sci., 2007(54):2282-2287.
[20] TOKUDA Y,USAMI A. Comparison of neutron and 2 MeV electron damage in N-Type silicon by deep-level transient spectroscopy[J]. IEEE Trans. Nucl. Sci., 2007(28):3564-3568.
刘莉, 董磊, 刘超铭, 李兴冀, 杨剑群, 马国亮. 偏置条件对双极晶体管位移辐射损伤的影响[J]. 太赫兹科学与电子信息学报, 2017, 15(5): 874. LIU Li, DONG Lei, LIU Chaoming, LI Xingji, YANG Jianqun, MA Guoliang. Effect of displacement radiation damage on bipolar junction transistors under various bias conditions[J]. Journal of terahertz science and electronic information technology, 2017, 15(5): 874.
PDF全文
