太赫兹科学与电子信息学报, 2017, 15 (5): 874, 网络出版: 2018-01-25
偏置条件对双极晶体管位移辐射损伤的影响
Effect of displacement radiation damage on bipolar junction transistors under various bias conditions
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刘莉, 董磊, 刘超铭, 李兴冀, 杨剑群, 马国亮. 偏置条件对双极晶体管位移辐射损伤的影响[J]. 太赫兹科学与电子信息学报, 2017, 15(5): 874. LIU Li, DONG Lei, LIU Chaoming, LI Xingji, YANG Jianqun, MA Guoliang. Effect of displacement radiation damage on bipolar junction transistors under various bias conditions[J]. Journal of terahertz science and electronic information technology, 2017, 15(5): 874.