红外与毫米波学报, 2018, 37 (1): 15, 网络出版: 2018-03-14
fT为350 GHz的InAlN/GaN HFET高频器件研究
High-frequency InAlN/GaN HFET with an fT of 350 GHz
基本信息
DOI: | 10.11972/j.issn.1001-9014.2018.01.004 |
中图分类号: | TN385 |
栏目: | |
项目基金: | Supported by MOST (2017YFA0205800), National Natural Science Foundation of China (11734005, 61674130 and 61604137) |
收稿日期: | 2017-07-04 |
修改稿日期: | 2017-08-28 |
网络出版日期: | 2018-03-14 |
通讯作者: | 付兴昌 (Pasf365@163.com) |
备注: | -- |
付兴昌, 吕元杰, 张力江, 张彤, 李献杰, 宋旭波, 张志荣, 房玉龙, 冯志红. fT为350 GHz的InAlN/GaN HFET高频器件研究[J]. 红外与毫米波学报, 2018, 37(1): 15. FU Xing-Chang, LV Yuan-Jie, ZHANG Li-Jiang, ZHANG Tong, LI Xian-Jie, SONG Xu-Bo, ZHANG Zhi-Rong, FANG Yu-Long, FENG Zhi-Hong. High-frequency InAlN/GaN HFET with an fT of 350 GHz[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 15.