红外与毫米波学报, 2018, 37 (1): 15, 网络出版: 2018-03-14
fT为350 GHz的InAlN/GaN HFET高频器件研究
High-frequency InAlN/GaN HFET with an fT of 350 GHz
补充材料
付兴昌, 吕元杰, 张力江, 张彤, 李献杰, 宋旭波, 张志荣, 房玉龙, 冯志红. fT为350 GHz的InAlN/GaN HFET高频器件研究[J]. 红外与毫米波学报, 2018, 37(1): 15. FU Xing-Chang, LV Yuan-Jie, ZHANG Li-Jiang, ZHANG Tong, LI Xian-Jie, SONG Xu-Bo, ZHANG Zhi-Rong, FANG Yu-Long, FENG Zhi-Hong. High-frequency InAlN/GaN HFET with an fT of 350 GHz[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 15.
PDF全文
