fT为350 GHz的InAlN/GaN HFET高频器件研究

采用再生长n+ GaN非合金欧姆接触工艺研制了具有高电流增益截止频率(fT)的InAlN/GaN异质结场效应晶体管 (HFETs)，器件尺寸得到有效缩小，源漏间距减小至600 nm.通过优化干法刻蚀和n+ GaN外延工艺，欧姆接触总电阻值达到0.16 Ω·mm，该值为目前金属有机化学气相沉积(MOCVD)方法制备的最低值.采用自对准电子束曝光工艺实现34 nm直栅.器件尺寸的缩小以及欧姆接触的改善，器件电学特性，尤其是射频特性得到大幅提升.器件的开态电阻(Ron)仅为0.41 Ω·mm，栅压1 V下，漏源饱和电流达到2.14 A/mm.此外，器件的电流增益截止频率(fT)达到350 GHz，该值为目前GaN基HFET器件国内报道最高值.

Abstract

Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) were realized by employing nonalloyed regrown n+-GaN Ohmic contacts, in which the source-to-drain distance (Lsd) was scaled to 600 nm. By processing optimization of dry etching and n+-GaN regrowth, a low total Ohmic resistance of 0.16 Ω·mm is obtained, which is a recorded value regrown by metal organic chemical vapor deposition (MOCVD). A 34 nm rectangular gate was fabricated by self-aligned-gate technology. The electrical characteristics of the devices, especially for the RF characteristics, were improved greatly after the reduction of ohmic resistance and gate length. The fabricated InAlN/GaN HFETs show a low on resistance (Ron) of 041 Ω·mm and a high drain saturation current density of 2.14 A/mm at Vgs=1 V. Most of all, the device shows a high fT of 350 GHz, which is a recorded result reported for GaN-based HFETs in domestic.

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付兴昌, 吕元杰, 张力江, 张彤, 李献杰, 宋旭波, 张志荣, 房玉龙, 冯志红. fT为350 GHz的InAlN/GaN HFET高频器件研究[J]. 红外与毫米波学报, 2018, 37(1): 15. FU Xing-Chang, LV Yuan-Jie, ZHANG Li-Jiang, ZHANG Tong, LI Xian-Jie, SONG Xu-Bo, ZHANG Zhi-Rong, FANG Yu-Long, FENG Zhi-Hong. High-frequency InAlN/GaN HFET with an fT of 350 GHz[J]. Journal of Infrared and Millimeter Waves, 2018, 37(1): 15.

fT为350 GHz的InAlN/GaN HFET高频器件研究

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