厚二氧化硅光波导薄膜制备及其特性分析
[1] Alayo M I, Pereyra I, Carreno M N P. Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperatures. Thin Solid Films, 1998, 332(2):40~45
[2] Bazylenko M, Gross M, Gauja E et al.. Techniques for monolithic integration of silica-based waveguide devices with optoelectronics. Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS ′98, IEEE, 1998, 1:38~39
[3] Hattangady S V, Alley R G, Fountain G G et al.. Effect of RF power on remote-plasma deposited SiO/sub 2/films. J. Appl. Phys., 1993, 73(11)7635~7642
[4] Landheer D, Xu D X, Tao Y et al.. Effect of power on interface and electrical properties of SiO/sub 2/films produced by plasma-enhanced. J. Appl. Phys., 1995, 77(4):1600~1606
[5] Worhoff K, Lambeck P V, Driessen A. Design, tolerance analysis, and fabrication of silicon oxynitride based planar optical waveguides for communication devices. J. Lightwave Technol., 1999, 17(8):1401~1407
[6] Hoffmann M, Kopka P, Voges E. Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems. IEEE Photon. Technol. Lett., 1997, 9(9):1238~1240
[7] Viard J, Beche E, Perarnau D et al.. XPS and FTIR study of silicon oxynitride thin films. J. European Ceramic Society, 1997, 17(15~16):2025~2028
[8] Li Danzhen, Chen Shunyu et al.. Surface photovoltaic properties of hererojunction of SiO2/Si. J. Fuzhou University (Natural Science Edition) (福州大学学报:自然科学版), 2001, 29(1):22~24
[9] Bazylenko M, Gross M, Gauja E et al.. Techniques for monolithic integration of silica-based waveguide devices with optoelectronics. Lasers and Electro-Optics Society Annual Meeting, 1998, LEOS ′98. IEEE, 1998, 1:38~39
娄丽芳, 盛钟延, 姚奎鸿, 肖丙刚, 何赛灵. 厚二氧化硅光波导薄膜制备及其特性分析[J]. 光学学报, 2004, 24(1): 24. 娄丽芳, 盛钟延, 姚奎鸿, 肖丙刚, 何赛灵. PECVD Deposition and Characterization of Thick Silica Film for Optical Waveguide[J]. Acta Optica Sinica, 2004, 24(1): 24.