半导体器件总剂量辐射效应的热力学影响

对商用三极管和MOS场效应晶体管进行了不同环境温度下的总剂量辐照实验, 对比了不同辐照温度对这两种器件辐射效应特性的影响。实验结果表明, 对于同一辐照总剂量, 三极管的基极电流、电流增益和MOS场效应晶体管的阈值电压漂移值都随着辐照温度的不同而存在较大的差异。总剂量为100 krad, 辐照温度分别为25, 70, 100 ℃时, NPN三极管的电流增益倍数分别衰减了71, 89和113, 而NMOS晶体管的阈值电压VT分别减少了3.53, 2.8, 2.82 V。

Abstract

The total dose irradiation experiments were conducted on commercial triodes and MOS transistors. The impacts of different radiation temperature on the radiation effect were compared when the other conditions were identical. For the same total dose, the base current and current gain of the triode, and the threshold voltage of the MOS transistor exist a big discrepancy according to the different radiation temperature. When the total dose is 100 krad(Si) and the radiation temperature is 25, 70, 100 ℃, the current gain reduction of the NPN triode is 71, 89, 113, and the threshold voltage degradation of the NMOS transistor is 3.53, 2.8, 2.82 V, respectively.

参考文献

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丛忠超, 余学峰, 崔江维, 郑齐文, 郭旗, 孙静, 周航. 半导体器件总剂量辐射效应的热力学影响[J]. 发光学报, 2014, 35(4): 465. CONG Zhong-chao, YU Xue-feng, CUI Jiang-wei, ZHENG Qi-wen, GUO Qi, SUN Jing, ZHOU Hang. Thermodynamic Impact on Total Dose Effect for Semiconductor Components[J]. Chinese Journal of Luminescence, 2014, 35(4): 465.

半导体器件总剂量辐射效应的热力学影响

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