[1] 王振国, 高健, 赵伟明, 等.有机发光器件(OLED)封装技术的研究现状分析［J］.现代显示, 2011, 22(1): 27-31.

    WANG Z G, GAO J, ZHAO W M, et al. The analysis about encapsulating technology of OLED ［J］. Advanced Display, 2011, 22(1): 27-31. (in Chinese)

[2] 高淑雅, 孔祥朝, 张方辉, 等.有机电致发光器件薄膜封装研究进展［J］.液晶与显示, 2012, 27(2): 198-203.

    GAO S Y, KONG X C, ZHANG F H, et al. Research progress of thin film encapsulation of organic light-emitting devices ［J］. Chinese Journal of Liquid Crystals and Displays, 2012, 27(2): 198-203. (in Chinese)

[3] PARK J S, CHAE H, CHUNG H K, et al. Thin film encapsulation for flexible AM-OLED: a review ［J］. Semiconductor Science and Technology, 2011, 26(3): 034001.

[4] JEON H, SHIN K, YANG C, et al. Thin-film passivation by atomic layer deposition for organic field-effect transistors ［J］. Applied Physics Letters, 2008, 93(16): 163304.

[5] JUNG H, CHOI H, JEON H, et al. Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition ［J］. Journal of Applied Physics, 2013, 114(17): 173511.

[6] 杨永强, 段羽, 陈平, 等.低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜［J］.发光学报, 2014, 35(9): 1087-1092.

    YANG Y Q, DUAN Y, CHEN P, et al. Deposition of Al2O3 film using atomic layer deposition method at low temperature as encapsulation layer for OLEDs ［J］. Chinese Journal of Luminescence, 2014, 35(9): 1087-1092. (in Chinese)

[7] YAMASHITA K, MORI T, MIZUTANI T. Encapsulation of organic light-emitting diode using thermal chemical-vapour-deposition polymer film ［J］. Journal of Physics D: Applied Physics, 2001, 34(5): 740-743.

[8] GHOSH A P, GERENSER L J, JARMAN C M, et al. Thin-film encapsulation of organic light-emitting devices ［J］. Applied Physics Letters, 2005, 86(22): 223503.

[9] MEYER J, SCHNEIDENBACH D, WINKLER T, et al. Reliable thin film encapsulation for organic light emitting diodes grown by low-temperature atomic layer deposition ［J］. Applied Physics Letters, 2009, 94(23): 233305.

[10] KIM L H, KIM K, PARK S, et al. Al2O3/TiO2 Nanolaminate Thin film encapsulation for organic thin film transistors via plasma-enhanced atomic layer deposition ［J］. ACS Applied Materials & Interfaces, 2014, 6(9): 6731-6738.

[11] YANG Y Q, DUAN Y, DUAN Y H, et al. High barrier properties of transparent thin-film encapsulations for top emission organic light-emitting diodes ［J］. Organic Electronics, 2014, 15(6): 1120-1125.

[12] MONT F W, KIM J K, SCHUBERT M F, et al. High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes ［J］. Journal of Applied Physics, 2008, 103(8): 083120.

[13] 段玮, 李晟, 张浩, 等.基于Al2O3封装薄膜的OLED水汽透过率测试方法及系统研究［J］.发光学报, 2016, 37(1): 88-93.

    DUAN W, LI S, ZHANG H, et al. Test method and system of water vapor transmission rate based on Al2O3 encapsulated thin-film for OLEDs ［J］. Chinese Journal of Luminescence, 2016, 37(1): 88-93. (in Chinese)

[14] MITCHELL D R G, ATTARD D J, TRIANI G. Transmission electron microscopy studies of atomic layer deposition TiO2 films grown on silicon ［J］. Thin Solid Films, 2003, 441(1/2): 85-95.

[15] KIM W D, HWANG G W, KWON O S, et al. Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitor applications ［J］. Journal of the Electrochemical Society, 2005, 152(8): C552-C559.