Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, Jilin University, Changchun 130012, China
4 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
In this Letter, we have demonstrated significant electric field induced (EFI) optical rectification (OR) effects existing in the surface layers of germanium (Ge) and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the two effective second-order susceptibility components χzzz(2eff)/χzxx(2eff) for Ge(001), Ge(110), and Ge(111) surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2018, 16(10): 102401
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces 190.4720 Optical nonlinearities of condensed matter Chinese Optics Letters
2017, 15(6): 062401
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
Pockel’s effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about 203 V, deduced by Pockel’s effect. The ratio χzxx(2)/χzzz(2) is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel’s signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.
230.2090 Electro-optical devices 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2016, 14(1): 012301
1 吉林大学 通信工程学院 光通信系，吉林 长春 130012
2 集成光电子学国家重点实验室吉林大学实验区，吉林 长春 130012
3 吉林大学 电子科学与工程学院，吉林 长春 130012
以沿[110]晶向切割的近本征硅单晶为样品，通过研究样品对连续波固体激光器所产生的1.3 μm的近红外光的双光子吸收所诱导的光电流对入射光偏振方向的依赖关系，研究了双光子吸收的各向异性.测得了硅单晶对该波长的光的三阶极化率张量χ(3)的各向异性系数为-0.25，两个独立分量的比值χxxxx/χxxyy的幅度为2.4，并基于前期工作所得的χxxyy的结果，进而确定了另一分量χxxxx的值大约为1.49×10-19 m2/V2.
非线性光学 硅单晶 双光子吸收 三阶极化率 非线性各向异性 nonlinear optics silicon crystal two-photon absorption third-order susceptibility nonlinear anisotropy
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 Applied Technique College, Jilin University, Changchun 130012, China
4
5 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China:
Diamonds are wide-gap semiconductors possessing excellent physical and chemical properties; thus, they are regarded as very appropriate materials for optoelectronic devices. Based on the Kerr effect, we introduce a simple and feasible method for measuring the third-order nonlinear optical susceptibility of synthetic diamonds. In the experiments, synthetic type I diamond samples and transverse electro-optic modulation systems are utilized. As for the laser with the wavelength of 650 nm, the third-order susceptibility and Kerr coefficient of the diamond samples are obtained at χ(3)1212=2:17×10-23 m2=V2 and S44= 1.93×10-23 m2=V2, respectively.
合成金刚石 克尔效应 三阶非线性光学极化率 160.4670 Optical materials 190.3270 Kerr effect 160.4760 Optical properties Chinese Optics Letters
2010, 8(7): 685
集成光电子学国家重点联合实验室吉林大学电子科学与工程学院, 吉林 长春 130012
从经典的极化理论出发, 分析了直流电场、低频调制电场和光波电场共同存在时硅材料折射率的变化, 从理论上揭示了场致线性电光效应的物理实质。以近本征硅材料为样品, 采用金属-绝缘体-半导体样品结构, 搭建了由塞纳蒙(Senarmont)补偿器改进成的横向电光调制系统。在硅材料空间电荷区内观测到显著的线性电光调制效应, 系统的半波电压小于170 V, 从实验上直接证实了硅材料中内建电场诱导的场致线性电光效应的存在。此外还观测到由克尔效应引起的二次电光调制信号, 以及由场致光整流效应引起的、随线偏振光的方位角的二倍余弦变化的电信号。实验结果与经典极化理论的预期完全一致, 也间接证实了硅材料中场致线性电光效应的存在。
非线性光学 场致线性电光效应 场致光整流 克尔效应 横向电光调制 硅材料
1 集成光电子学国家重点联合实验室吉林大学实验区,吉林大学电子科学与工程学院,吉林,长春,130012
2 吉林建筑工程学院,吉林,长春,130021
首次测量了硅材料在1.3μm波长处,基于克尔效应和弗朗兹-凯尔迪什效应的电致双折射,进而计算出三阶非线性极化率张量X(3)的分量X(3)xyxy.观测到弗朗兹-凯尔迪什效应引起的折射率变化与入射光的偏振态有关.在实验中,测得了由克尔效应引起的折射率之差为⊿n=5.49×10-16E20,而弗朗兹-凯尔迪什效应引起的折射率之差为⊿n'=2.42×10-16E2.50.
克尔效应 弗朗兹-凯尔迪什效应 电致双折射 三阶非线性极化率张量 偏振态
具有反演对称中心的硅单晶在电场作用下体内的反演对称中心消失,因而理论上应产生偶数阶非线性极化率。从理论上根据矢量与张量的作用,利用χ(2)eff=χ(3)·E这一关系和张量变换理论系统地阐述了硅材料在内建电场或外加电场的作用下,具体在方向分别沿[111]、[110]和[001]的电场作用下,得到的等效二阶极化率张量χ(2)eff分别与C3v、C2v和C4v点群的二阶极化率张量具有相同的形式,说明在物理性质方面,硅的对称性由Oh群在相应方向电场作用下分别被降低为C3v、C2v和C4v群,因此应该具有相应对称性晶体的二阶非线性光学性质;提出了电场E沿任意方向时硅的等效二阶极化率张量χ(2)eff的计算方法,对研究硅材料和其他具有反演对称中心材料的场致二阶非线性光学性质实验具有指导意义。
非线性光学 双光子响应 等效二阶极化率张量 倍频吸收 双光子吸收
