Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, Jilin University, Changchun 130012, China
4 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
In this Letter, we have demonstrated significant electric field induced (EFI) optical rectification (OR) effects existing in the surface layers of germanium (Ge) and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the two effective second-order susceptibility components χzzz(2eff)/χzxx(2eff) for Ge(001), Ge(110), and Ge(111) surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2018, 16(10): 102401
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces 190.4720 Optical nonlinearities of condensed matter Chinese Optics Letters
2017, 15(6): 062401
Author Affiliations
Abstract
1 Key Laboratory for Laser Plasmas (Ministry of Education) and Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
2 Collaborative Innovation Center of IFSA (CICIFSA), Shanghai Jiao Tong University, Shanghai 200240, China
3 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
4 College of Science, National University of Defense Technology, Changsha 410073, China
5 SUPA, Department of Physics, University of Strathclyde, Glasgow G4 0NG, UK
The influence of laser temporal contrast on high-order harmonic generation from intense laser interactions with solid-density plasma surfaces is experimentally studied. A switchable plasma mirror system is set up to improve the contrast by two orders of magnitude at 10 ps prior to the main peak. By using the plasma mirror and tuning the prepulse, the dependence of high-order harmonic generation on laser contrast is investigated. Harmonics up to the 21st order via the mechanism of coherent wake emission are observed only when the targets are irradiated by high contrast laser pulses by applying the plasma mirror.
190.2620 Harmonic generation and mixing 240.4350 Nonlinear optics at surfaces Chinese Optics Letters
2017, 15(8): 081902
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
Pockel’s effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about 203 V, deduced by Pockel’s effect. The ratio χzxx(2)/χzzz(2) is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel’s signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.
230.2090 Electro-optical devices 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2016, 14(1): 012301
中北大学 信息与通信工程学院, 太原 030051
模拟并分析了波长为633 nm的偏振光通过Kretschmann-Raether微米级棱镜波导结构时的古斯-汉欣位移.在金膜厚度为45 nm的条件下, 当入射角为44.1°时, 利用稳态相位理论, 得到的最大束位移为+120 μm；当入射角为44.1°时, 利用COMSOL Multiphysics5.1软件中的波动光学模块, 得到的最大束位移为+3.37 μm.在共振角附近, COMSOL Multiphysics5.1模拟软件与稳态相位理论均得到正的古斯-汉欣位移, 但是COMSOL Multiphysics5.1软件模拟的结果远小于稳态相位理论仿真的结果.该研究对设计基于古斯-汉欣位移测量的高灵敏度传感器具有指导意义.
集成光学 表面等离子体共振 古斯-汉欣位移 非线性光学 Integrated optics devices Surface plasmons resonance Goos-Hnchen shifts Nonlinear optics at surfaces
Author Affiliations
Abstract
Department of Applied Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
We theoretically study the nonlinear surface wave propagation at the interface between superconductor media and nonlinear metamaterials. The dispersion equation is analytically derived and solved numerically. Moreover, we present the power for the propagating waves at the interface. The results display different behaviors of the propagating waves as the nonlinear term or temperature is tuned. These results indicate that this structure can have potential applications in superconductor waveguide devices and integrated optics.
240.0240 Optics at surfaces 240.4350 Nonlinear optics at surfaces 240.5420 Polaritons 240.6680 Surface plasmons 240.6690 Surface waves Chinese Optics Letters
2015, 13(s1): S12401
Author Affiliations
Abstract
The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.
250.4390 Nonlinear optics, integrated optics 250.0040 Detectors 190.4400 Nonlinear optics, materials 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2013, 11(11): 112501
Author Affiliations
Abstract
We experimentally verify that surface plasmon (SP) enhances the photoluminescence (PL) of visible light from Tb3+-doped 60SiO2-20Al2O3-20CaF2:0.3Tb3+, 20Yb3+ glass ceramics by using electron beam lithography to fabricate silver nanoparticles on the surface of the glass ceramics. Numerical calculation for the SP enhancement spectroscopy is achieved by using the finite-difference time-domain algorithm. A PL enhancement of Tb3+ by as much as 1.6 times is observed. The PL enhancement is mainly due to the coupling of excitation from 7F6 to 5D4 transition dipole of Tb3+ ion with SP mode induced from the silver nanoparticles.
240.6680 Surface plasmons 240.6695 Surface-enhanced Raman scattering 240.4350 Nonlinear optics at surfaces 310.6188 Spectral properties Chinese Optics Letters
2012, 10(9): 092401
Author Affiliations
Abstract
1 Shenzhen Key Laboratory of Laser Engineering, College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, China
2 Shenzhen Academy of Aerospace Technology, Shenzhen 518057, China
Cr ion implantations in glass with the different doses of D=1.493×1017 and 4.976×1017 ion/cm2 are obtained by metal vapor vacuum arc (MEVVA). The effects of the different Cr ion implanted doses on terahertz (THz) transmission property are analyzed from THz time-domain spectroscopy. The results show that the more the Cr ion implanted dose in the micro-area implantation glasses, the larger the THz transmission except the larger absorption at 0.24 THz. This is an effect attributed to the coupling of plasmas on both the implantation and the implantation affected zones of the Cr ion implantation glass.
离子注入 金属蒸汽真空弧离子源 太赫兹时域光谱 190.4400 Nonlinear optics, materials 190.4350 Nonlinear optics at surfaces 140.3070 Infrared and far-infrared lasers Chinese Optics Letters
2010, 8(4): 425
Author Affiliations
Abstract
1 Department of Physics, Wuhan University, Wuhan 430072
2 Department of Physics, Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084
3 Center of Nanoscience and Nanotechnology Research, Wuhan University, Wuhan 430072
The third-order susceptibility of multiwalled carbon nanotubes (MWCNTs) grown on Si substrate were measured using reflective Z-scan (RZ-scan) technique with femto-second laser pulses at 790 nm. The nonlinear absorption coefficient 'beta' and nonlinear refraction index 'gamma' were measured to be about 9*10^(2) cm/GW and 9.6*10^(-3) cm2/GW, respectively. This is about one order of magnitude larger than the measurement of MWCNTs on transparent quartz substrate. The enhanced optical nonlinearities are contributed by the enhanced local field and the photoinduced off-resonant absorption of the 'pi'-plamon of MWCNTs on Si.
190.4400 Nonlinear optics, materials 240.4350 Nonlinear optics at surfaces 320.7110 Ultrafast nonlinear optics Chinese Optics Letters
2005, 3(0s): 213
