陈龙 1,2张建林 1,*彭昊 1,2李美惠 1[ ... ]魏宇星 1
作者单位
摘要
1 中国科学院光电技术研究所,四川 成都 610209
2 中国科学院大学电子电气与通信工程学院,北京 100049
To improve the performance of few-shot classification, we present a general and flexible method named Multi-Scale Attention and Domain Adaptation Network (MADA). Firstly, to tackle the problem of limited samples, a masked autoencoder is used to image augmentation. Moreover, it can be inserted as a plug-and-play module into a few-shot classification. Secondly, the multi-scale attention module can adapt feature vectors extracted by embedding function to the current classification task. Multi-scale attention machine strengthens the discriminative image region by focusing on relating samples in both base class and novel class, which makes prototypes more accurate. In addition, the embedding function pays attention to the task-specific feature. Thirdly, the domain adaptation module is used to address the domain shift caused by the difference in data distributions of the two domains. The domain adaptation module consists of the metric module and the margin loss function. The margin loss pushes different prototypes away from each other in the feature space. Sufficient margin space in feature space improves the generalization performance of the method. The experimental results show the classification accuracy of the proposed method is 67.45% for 5-way 1-shot and 82.77% for 5-way 5-shot on the miniImageNet dataset. The classification accuracy is 70.57% for 5-way 1-shot and 85.10% for 5-way 5-shot on the tieredImageNet dataset. The classification accuracy of our method is better than most previous methods. After dimension reduction and visualization of features by using t-SNE, it can be concluded that domain drift is alleviated, and prototypes are more accurate. The multi-scale attention module enhanced feature representations are more discriminative for the target classification task. In addition, the domain adaptation module improves the generalization ability of the model.
小样本图像识别 注意力机制 领域自适应 相似性度量 few-shot image classification attention mechanism domain adaptation similarity metric 
光电工程
2023, 50(4): 220232
彭昊 1,2王婉祺 1,2陈龙 1,2彭先蓉 1,*[ ... ]李美惠 1
作者单位
摘要
1 中国科学院光电技术研究所,四川 成都 610209
2 中国科学院大学,北京 100049
针对少量样本条件下模型易过拟合、目标错检与漏检问题,本文基于TFA (two-stage fine-tuning approach)提出了一种在线推断校准的小样本目标检测框架。该框架设计了一种全新的Attention-FPN网络,通过建模特征通道间的依赖关系选择性融合特征,结合分级冻结的学习机制引导RPN模块提取正确的新类前景目标;同时,构建了一种在线校准模块对样本进行实例分割编码,对众多候选目标进行评分重加权处理,纠正误检和漏检的预测目标。结果表明,所提算法在VOC数据集Novel Set1中,五个任务的平均nAP50提升10.16%,在性能上优于目前的主流算法。

小样本目标检测 Attention-FPN 特征通道 分级冻结 在线校准 RPN few-shot object detection attention-FPN feature channels hierarchical freezing online calibration RPN 
光电工程
2023, 50(1): 220180
作者单位
摘要
北京大学 薄膜晶体管与先进显示重点实验室, 广东 深圳 518055
采用氢(H)扩散掺杂源漏的方法对自对准顶栅a-IGZO TFT的制备工艺进行了研究。氢的扩散掺杂通过PECVD生长SiNx钝化层而实现。实验结果显示, 在栅电极图形化后, 是否继续进行栅介质刻蚀对器件性能有较大影响。对刻蚀了SiO2栅介质层的器件, 发现其泄漏电流较大, 这可能是由于有源层侧壁的刻蚀残留物导致的; 短沟道器件阈值电压偏负且在经过退火后迁移率减小, 则是由于严重的H横向扩散导致的。对未刻蚀SiO2栅介质层的器件, 发现其阈值电压相对偏正, 应该是因为SiO2栅介质对H的掺杂有一定的阻挡作用, 导致H的横向扩散得到了抑制; 器件在经过退火后迁移率上升, 开态电流增大, 应该是因为未刻蚀栅介质中的H热扩散到下方的源漏区域, 降低了源漏电阻。
非晶铟镓锌氧薄膜晶体管 自对准顶栅 栅介质刻蚀 氢掺杂 a-IGZO TFTs self-aligned top gate gate dielectric etching H-doped 
光电子技术
2019, 39(1): 21

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