H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究
[1] Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature, 2004, 432(7016): 488-492.
[2] Bae J U, Kim D H, Kim K, et al. Development of Oxide TFT's Structures[C]//SID Symposium Digest of Technical Papers, Blackwell Publishing Ltd, 2013, 44(1): 89-92.
[3] Geng D, Kang D H, Man J S, et al. High-speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZOTFTs[J].IEEE Electron Device Letters, 2012, 33(33): 1012-1024.
[4] Park J, Song I, Kim S, et al. Self-Aligned Top-Gate Amorphous Gallium Indium Zinc Oxide Thin Film Transistors[J]. Applied Physics Letters, 2008, 93(5): 053501.
[5] Kim S, Park J, Kim C, et al. Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by NH3 Plasma Treatment[J]. Electron Device Letters IEEE, 2009, 30(4): 374-376.
[6] Park J, Song I, Kim S, et al. Self-Aligned Top-Gate Amorphous Gallium Indium Zinc Oxide Thin Film Transistors[J]. Applied Physics Letters, 2008, 93(5): 053501.
[7] Liu S E, Yu M J, Lin C Y, et al. Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors[J]. IEEE Electron Device Letters, 2011, 32(2): 161-163.
[8] Ye Z, Lu L, Man W. Zine-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Region Doped With Implanted Boron For Enhanced Thermal Stability[J]. IEEE Transactions on Electron Device, 2012, 59(2): 393-399.
[9] Morosawa N, Ohshima Y, Morooka M, et al. Novel Self-aligned top-gate oxide TFT for AMOLED Displays[J].Journal of the Society for Information Display, 2012, 20(1): 47-52.
[10] Chern J G J, Chang P, Motta R F, et al. A New Method to Determine MOSFET Channel Length[J]. IEEE Electron Device Letters, 1980, 1(9): 170-173.
[11] Suresh A, Muth J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors[J]. Applied Physics Letters, 2008, 92(3): 033502.
[12] Lee J, Park J S, Pyo Y S, et al. The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors[J]. Applied Physics Letters, 2009, 95(12): 3502.
付海时, 彭昊, 张晓东, 张盛东. H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究[J]. 光电子技术, 2019, 39(1): 21. FU Haishi, PENG Hao, ZHANG Xiaodong, ZHANG Shengdong. Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion[J]. Optoelectronic Technology, 2019, 39(1): 21.