光电子技术, 2019, 39 (1): 21, 网络出版: 2019-04-11
H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究
Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion
Metrics
摘要访问:2811次
PDF 下载:22次
全文浏览:1次
总被查询:2次
付海时, 彭昊, 张晓东, 张盛东. H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究[J]. 光电子技术, 2019, 39(1): 21. FU Haishi, PENG Hao, ZHANG Xiaodong, ZHANG Shengdong. Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion[J]. Optoelectronic Technology, 2019, 39(1): 21.