光电子技术, 2019, 39 (1): 21, 网络出版: 2019-04-11  

H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究

Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion
作者单位
北京大学 薄膜晶体管与先进显示重点实验室, 广东 深圳 518055
引用该论文

付海时, 彭昊, 张晓东, 张盛东. H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究[J]. 光电子技术, 2019, 39(1): 21.

FU Haishi, PENG Hao, ZHANG Xiaodong, ZHANG Shengdong. Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion[J]. Optoelectronic Technology, 2019, 39(1): 21.

参考文献

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付海时, 彭昊, 张晓东, 张盛东. H扩散掺杂源漏的自对准顶栅a-IGZO TFT制备工艺研究[J]. 光电子技术, 2019, 39(1): 21. FU Haishi, PENG Hao, ZHANG Xiaodong, ZHANG Shengdong. Fabrication of Self-aligned Top-gate a-IGZO TFT with Source-drain Doped by Hydrogen Diffusion[J]. Optoelectronic Technology, 2019, 39(1): 21.

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