Modern scintillator-based radiation detectors require silicon photomultipliers (SiPMs) with photon detection efficiency higher than 40% at 420 nm, possibly extended to the vacuum ultraviolet (VUV) region, single-photon time resolution (SPTR) < 100 ps, and dark count rate (DCR) < 150 kcps/mm². To enable single-photon time stamping, digital electronics and sensitive microcells need to be integrated in the same CMOS substrate, with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm × 4 mm. This is challenging due to the increasing doping concentrations at low CMOS scales, deep-level carrier generation in shallow trench isolation fabrication, and power consumption, among others. The advances at 350 and 110 nm CMOS nodes are benchmarked against available SiPMs obtained in CMOS and commercial customized technologies. The concept of digital multithreshold SiPMs with a single microcell readout is finally reported, proposing a possible direction toward fully digital scintillator-based radiation detectors.

对于场线耦合问题，经典传输线理论不适用于求解高频电磁干扰辐照下传输线负载上的电压和电流响应。针对这一问题，首先介绍了一种基于天线理论和模拟行为建模（ABM）的时域全波建模方法。该方法利用Harrington矩量法将电流积分方程离散并推导得到宏模型时域表达式，然后利用ABM频域功能实现频变参数的傅里叶逆变换和时域卷积计算。利用电路求解器，该建模方法可直接求解任意结构传输线耦合的负载处瞬态响应；与传统全波算法相比，模型一旦建立便可应用于任意入射场和线性/非线性负载的情况，无需重复耗时地求解电流积分方程。该方法可简化全波算法求解过程，提高仿真计算效率，尤其便于在入射场和负载存在不确定参数时进行高效重复抽样计算以获得统计特性。然后以高频电磁干扰耦合有损大地上的双导体传输线为例，通过与数值电磁代码和传统传输线理论方法的求解结果对比，验证了所提宏模型的有效性以及传输线理论在解决场线耦合问题时的局限性。结果表明，基于全波方法构建的宏模型可在时域内高效准确地求解高频电磁干扰辐照下任意形状传输线负载上的瞬态响应。