Author Affiliations
Abstract
School of Microelectronics, Dalian University of Technology, Dalian 116024, China
We investigated the influence of the growth temperature, O2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga2O3 illustrate that β-Ga2O3 growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 °C. The fastest growth rate of β-Ga2O3 films was produced when the O2 flow was 20 sccm. To guarantee that β-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10 : 1.
β-Ga2O3 epitaxy carbothermal reduction method growth parameters Journal of Semiconductors
2023, 44(6): 062804
电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054
以In2O3和GeO2为原料, 采用碳还原法制备了In2Ge2O7多晶薄膜, 利用XRD和SEM对薄膜的结构和形貌进行了表征。对基于In2Ge2O7薄膜的金属半导体金属(MSM)紫外探测器进行了紫外光电导特性测量, 结果显示:在波长为250nm的紫外光照射下, 在5V偏压下, 器件的光电流为727μA(暗电流为12μA), 光响应度达到262.9A·W-1, 光响应上升时间约为67s, 下降时间约为15s。分析认为较长的响应时间是由于内部的缺陷与位错造成的。初步研究结果表明:In2Ge2O7薄膜可以作为一种良好的日盲紫外探测材料。
In2Ge2O7薄膜 碳还原法 紫外探测器 In2Ge2O7 thin film carbothermal reduction method ultraviolet photodetector