吕松竹 1赵建行 1,*周姚 1曹英浩 1[ ... ]周见红 1,3,**
作者单位
摘要
1 长春理工大学 光电工程学院, 吉林 长春  130022
2 哈尔滨工业大学 物理学院, 哈尔滨 黑龙江  150001
3 长春理工大学 光电测量和光信息传输技术教育部重点实验室, 吉林 长春  130022
由于硫系玻璃具有良好的光学性质,在非线性光学等方面研究广泛,但基于硫系玻璃光电探测器的相关研究却很少。本文利用真空共热蒸发技术制备了不同掺银比例的硫系玻璃薄膜作为半导体膜层结构,并设计构建了金属-绝缘体-半导体结构的自供电光电探测器,探究了该光电探测器的响应光谱范围。结果表明,该探测器对可见光到近红外区域的光均有响应。针对掺银硫系玻璃光电探测器在635 nm波长激光下,研究了探测器响应电压与激发功率之间的关系。当激光功率小于10 mW时,探测器响应电压与激发功率线性相关;当激光功率大于10 mW时,探测器响应电压逐渐饱和。探测器的上升和衰减时间分别为3.932 s和1.522 s。本研究为硫系玻璃材料在自供电光电探测器领域的应用提供了证明。
硫系玻璃 光电探测器 金属-绝缘体-半导体 chalcogenide glass photodetector metal-insulator-semiconductor 
发光学报
2024, 45(2): 343
Author Affiliations
Abstract
Northwestern Polytechnical University, School of Physical Science and Technology, MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, Key Laboratory of Light-Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, Shaanxi Key Laboratory of Optical Information Technology, Xi’an, China
Optical cavities play crucial roles in enhanced light–matter interaction, light control, and optical communications, but their dimensions are limited by the material property and operating wavelength. Ultrathin planar cavities are urgently in demand for large-area and integrated optical devices. However, extremely reducing the planar cavity dimension is a critical challenge, especially at telecommunication wavelengths. Herein, we demonstrate a type of ultrathin cavities based on large-area grown Bi2Te3 topological insulator (TI) nanofilms, which present distinct optical resonance in the near-infrared region. The result shows that the Bi2Te3 TI material presents ultrahigh refractive indices of >6 at telecommunication wavelengths. The cavity thickness can approach 1/20 of the resonance wavelength, superior to those of planar cavities based on conventional Si and Ge high refractive index materials. Moreover, we observed an analog of the electromagnetically induced transparency (EIT) effect at telecommunication wavelengths by depositing the cavity on a photonic crystal. The EIT-like behavior is derived from the destructive interference coupling between the nanocavity resonance and Tamm plasmons. The spectral response depends on the nanocavity thickness, whose adjustment enables the generation of obvious Fano resonance. The experiments agree well with the simulations. This work will open a new door for ultrathin cavities and applications of TI materials in light control and devices.
topological insulator optical nanocavity photonic crystal electromagnetically induced transparency-like effect 
Advanced Photonics
2024, 6(3): 036001
Author Affiliations
Abstract
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
On-chip stimulated Brillouin scattering (SBS) has attracted extensive attention by introducing acousto-optic coupling interactions in all-optical signal processing systems. A series of chip-level applications such as Brillouin lasers, amplifiers, gyroscopes, filters, and nonreciprocal devices are realized based on Brillouin acousto-optic interaction. Here, we first introduce the fundamental principle of SBS in integrated photonics and a method for calculating Brillouin gain; then we illustrate the Brillouin effect on different material platforms with diverse applications. Finally, we make a concise conclusion and offer prospects on the future developments of on-chip SBS.
stimulated Brillouin scattering integrated photonics silicon-on-insulator 
Chinese Optics Letters
2024, 22(2): 020031
Author Affiliations
Abstract
1 East China Normal University, School of Physics and Electronic Science, State Key Laboratory of Precision Spectroscopy, Shanghai, China
2 Nanjing University, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, Nanjing, China
3 China Jiliang University, College of Optical and Electronic Technology, Hangzhou, China
4 Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China
5 Chinese Academy of Sciences (CAS), Shanghai Institute of Optics and Fine Mechanics (SIOM), State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai, China
Achieving spatiotemporal control of light at high speeds presents immense possibilities for various applications in communication, computation, metrology, and sensing. The integration of subwavelength metasurfaces and optical waveguides offers a promising approach to manipulate light across multiple degrees of freedom at high speed in compact photonic integrated circuit (PIC) devices. Here, we demonstrate a gigahertz-rate-switchable wavefront shaping by integrating metasurface, lithium niobate on insulator photonic waveguides, and electrodes within a PIC device. As proofs of concept, we showcase the generation of a focus beam with reconfigurable arbitrary polarizations, switchable focusing with lateral focal positions and focal length, orbital angular momentum light beams as well as Bessel beams. Our measurements indicate modulation speeds of up to the gigahertz rate. This integrated platform offers a versatile and efficient means of controlling the light field at high speed within a compact system, paving the way for potential applications in optical communication, computation, sensing, and imaging.
metasurface photonic integrated circuit lithium niobate on insulator high-speed modulation 
Advanced Photonics
2024, 6(1): 016005
冯瑶 1,2耿敏明 1,2,3,4何万才 1,2赖明彬 1,2[ ... ]张振荣 1,2,3
作者单位
摘要
1 广西大学 计算机与电子信息学院,南宁 530004
2 广西多媒体通信与网络技术重点实验室,南宁 530004
3 广西高校多媒体通信与信息处理重点实验室,南宁 530004
4 广西信息科学实验中心,广西 桂林 541004
为设计出高效率且低偏振耦合相关损耗的二维光栅耦合器(2D-GC),提出一种基于绝缘体上硅(SOI)的类梅花型2D-GC。该2D-GC由多个单元周期排列而成,每个单元的图案呈类梅花型,该结构中的晶胞由2对圆形图案构成,并采用时域有限差分(FDTD)法对2D-GC结构参数进行数值仿真优化。仿真结果表明:在最佳优化参数结构时,所提2D-GC的有效工作波段为1.525~1.6μm,最佳耦合效率为56%,对应的耦合损耗为-2.4 dB,偏振相关损耗为0.18 dB。
绝缘体上硅 二维光栅耦合器 类梅花型 偏振 耦合损耗 silicon-on-insulator, two-dimensional grating coup 
光通信技术
2023, 47(4): 0001
作者单位
摘要
国网内蒙古东部电力有限公司兴安供电公司, 内蒙古兴安盟 137400
绝缘子运行状态的评估关乎到输电工程的安全运行。紫外成像技术提供了一种绝缘子评估的量化手段, 为此, 提出了一种基于改进自适应神经模糊推理系统(adaptive neuro-fuzzy inference system, ANFIS)的绝缘子紫外光斑评估方法。首先, 搭建了绝缘子污秽放电测试平台, 开展了不同测试距离和增益下的绝缘子放电强度研究。其次, 将增益以及紫外光斑面积作为训练数据, 建立了基于贝叶斯推理的 ANFIS模型。最后, 进行了现场验证测试。结果表明, 该方法具有良好的预测精度和测试效率, 适用于绝缘子紫外成像量化评估, 为绝缘子运行状态的评估提供了技术支撑。
绝缘子 紫外成像 贝叶斯 光斑面积 insulator, ultraviolet imaging, Bayesian inference ANFIS 
红外技术
2023, 45(12): 1346
作者单位
摘要
1 南昌大学能源与电气工程系, 江西南昌 330031
2 国网电力科学研究院武汉南瑞有限责任公司, 湖北武汉 430074
瓷绝缘子在配电线路中应用广泛, 受长期机电应力与户外恶劣环境影响, 在运行中易发生劣化。红外热像法是一种重要的劣化绝缘子带电检测方法, 具有检测方便、安全高效和非接触式的优点, 已成为线路巡检的重要手段, 但劣化绝缘子热像特征不明显, 肉眼识别易出现误判。为此, 本文首先对配电线路瓷绝缘子进行温度场仿真分析, 然后提出了一种劣化绝缘子红外热像检测方法, 采用多尺度模板匹配算法定位识别绝缘子, 获取绝缘子红外图像中的坐标参数, 并对其进行分割提取, 通过最小二乘线性拟合提取绝缘子表面温度。结合相关标准与仿真分析结果, 通过同类比较判断法对比多个绝缘子温度状态的差异, 实现劣化绝缘子检测。
劣化绝缘子 红外热像法 图像处理 图像匹配 温度提取 faulty insulator, infrared thermography, image pro 
红外技术
2023, 45(12): 1337
作者单位
摘要
1 福州大学电气工程与自动化学院,福建福州 350108
2 国网福建电力有限公司电力科学研究院,福建福州 350007
复合绝缘子在不同缺陷类型下表现出不同的发热特征,基于复合绝缘子中心轴温度数据,提出了一种基于一维残差网络的复合绝缘子发热缺陷检测方法。首先,统计分析复合绝缘子不同缺陷类型下的异常温升范围及位置信息,得到各缺陷类型下的复合绝缘子中心轴温度数据样本集;然后,建立一维残差网络模型,在残差块中引入空洞卷积来扩大感受野,并加入有效通道注意力机制模块(efficient channel attention network, ECA_Net),提升与缺陷类别相关性较高的特征权重;最后,进行了算例验证及模型对比,同时采用 t分布随机紧邻嵌入(t-distributed stochastic neighbor embedding, t-SNE)可视化方法,反映模型特征提取的效果。结果表明:该模型能够有效捕捉中心轴线温度数据的空间维度信息,自适应提取类别区分度较大的特征,相较于普通卷积、自编码器(auto encoder, AE)和支持向量机(support vector machine, SVM),其识别准确率得到了提升,具有较好的鲁棒性和泛化能力,实现了端到端的复合绝缘子发热缺陷检测。
复合绝缘子 热成像 一维残差网络 空洞卷积 注意力机制 缺陷检测 composite insulator, thermography, one-dimensional 
红外技术
2023, 45(6): 663
作者单位
摘要
中国电子科技集团公司 第二十六研究所,重庆 400060
研究了常规光刻工艺下单晶薄膜晶圆制备声表面波滤波器的频率分散特性。结果表明,压电单晶薄膜的表面色差是引起频率分散性恶化的根本原因,采用抗反射膜工艺抑制衬底反射以及分区曝光工艺对不同色块进行曝光补偿,均能有效地提高片内频率一致性,频率2 MHz内包含最大器件数量占比,从常规曝光的48.81%提高到抗反射膜工艺的53.57%和分区曝光工艺的70.24%。
压电单晶薄膜衬底 抗反射膜 曝光补偿 频率一致性 piezoelectric-on-insulator wafer antireflective film exposure compensation frequency consistency 
压电与声光
2023, 45(6): 800
作者单位
摘要
1 联合微电子中心有限责任公司, 重庆 400030
2 模拟集成电路国家级重点实验室, 重庆 400060
以MoS2为代表的二维半导体材料是下一代延续摩尔定律的潜在电子学新材料之一。然而,二维特性使得MoS2中电子的输运行为对环境条件高度敏感。采用范德华绝缘体材料进行封装包覆,是目前消除二维半导体器件环境敏感性的有效方案之一。文章采用化学气相传输法制备新型范德华绝缘体材料CrOCl,并以少层CrOCl为介电层和封装材料,设计并制备了基于MoS2的场效应晶体管。以CrOCl为底栅介电层及封装材料的MoS2晶体管的室温场效应迁移率约为60 cm2·V-1·s-1,2 K下进一步增大至100 cm2·V-1·s-1。此外,相比于无封装MoS2晶体管高达20 V的回滞窗口,CrOCl的包覆有效消除了晶体管转移特性的回滞现象,证明其在二维材料电子学中的应用潜力。
范德华绝缘体CrOCl MoS2场效应晶体管 介电层 封装材料 回滞现象 van der Waals insulator CrOCl MoS2 field effect transistor dielectric layer encapsulation material hysteresis 
微电子学
2023, 53(2): 315

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!