1 国科大杭州高等研究院 物理与光电工程学院,浙江 杭州 310024
2 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,上海 200083
本文对基于带间级联结构和谐振腔结构的中红外发光二极管进行了仿真和设计。在传统带间级联发光二极管的基础上,从器件外部引入分布布拉格反射镜(DBR)谐振腔结构,形成谐振腔带间级联发光二极管。对谐振腔参数进行仿真优化,包括DBR周期数、谐振腔的腔长、有源区在谐振腔中的位置等。结果表明,使用单周期ZnS/Ge DBR作为谐振腔上反射镜的器件输出功率最大,有源区置于谐振腔内部电场强度波峰处时,器件的输出功率最大,三级谐振腔带间级联LED器件的输出功率与55级无谐振腔器件输出功率相当,其光束发散角的半峰全宽可以从92度减小到52度。结合已生长的5级带间级联LED器件的测试结果,增加谐振腔结构后的仿真结果表明,峰值波长的辐射强度增强11.7倍,积分辐射强度增强5.43倍,光谱的半峰宽变窄6.45倍。
发光二极管 谐振腔 带间级联 辐射增强 light emitting diode resonant cavity interband cascade radiation enhancement
光子学报
2023, 52(10): 1052405
光子学报
2023, 52(10): 1052403
Author Affiliations
Abstract
1 The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
We report on a long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber. The device is a three-stage interband cascade structure. At 77 K, the 50% cutoff wavelength of the detector is 8.48 μm and the peak photoresponse wavelength is 7.78 μm. The peak responsivity is 0.93 A/W and the detectivity D* is 1.12 × 1011 cm·Hz0.5/W for 7.78 μm at –0.20 V. The detector can operate up to about 260 K. At 260 K, the 50% cutoff wavelength is 11.52 μm, the peak responsivity is 0.78 A/W and the D* is 5.02 × 108 cm·Hz0.5/W for the peak wavelength of 10.39 μm at –2.75 V. The dark current of the device is dominated by the diffusion current under both a small bias voltage of –0.2 V and a large one of –2.75 V for the temperature range of 120 to 260 K.We report on a long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber. The device is a three-stage interband cascade structure. At 77 K, the 50% cutoff wavelength of the detector is 8.48 μm and the peak photoresponse wavelength is 7.78 μm. The peak responsivity is 0.93 A/W and the detectivity D* is 1.12 × 1011 cm·Hz0.5/W for 7.78 μm at –0.20 V. The detector can operate up to about 260 K. At 260 K, the 50% cutoff wavelength is 11.52 μm, the peak responsivity is 0.78 A/W and the D* is 5.02 × 108 cm·Hz0.5/W for the peak wavelength of 10.39 μm at –2.75 V. The dark current of the device is dominated by the diffusion current under both a small bias voltage of –0.2 V and a large one of –2.75 V for the temperature range of 120 to 260 K.
interband cascade infrared photodetector type II superlattices long wavelength Journal of Semiconductors
2023, 44(4): 042301
1 国科大杭州高等研究院 物理与光电工程学院,浙江 杭州 310024
2 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室,上海 200083
高温工作探测器是第三代红外焦平面发展的重要方向之一。带间级联探测器结合了势垒结构与多级吸收区结构的特点,通过多量子阱弛豫和隧穿实现光生载流子单方向输运,可以有效降低来自PN结耗尽区的产生-复合暗电流;利用多级短吸收区结构,在扩散长度很短的情况下仍然可以有效地收集光生载流子,从而可以提高探测器在高工作温度下的探测性能。本文主要介绍了作者在带间级联红外光电器件方面的研究进展,包括高工作温度带间级联探测器、高带宽带间级联探测器以及带间级联发光器件等。
带间级联探测器 高工作温度 红外焦平面 发光二极管 interband cascade photodetector high operation temperature infrared focal plane arrays light emitting diode
Author Affiliations
Abstract
1 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Beijing Academy of Quantum Information Sciences, Beijing 100193, China
We demonstrate GaSb-based interband cascade lasers (ICLs) emitting around 3.65 µm, which exhibit a room-temperature continuous-wave (CW) output power above 100 mW. Cavity-length analysis showed that the laser structure has a low internal loss of while maintaining a total internal quantum efficiency greater than one. After 6400 h CW operation at 25°C, the threshold current of the laser increased by 3%, and the output power decreased by 7%, indicating good reliability of the device.
interband cascade lasers quantum well mid-infrared semiconductor lasers Chinese Optics Letters
2022, 20(2): 022501
红外与激光工程
2021, 50(4): 20200083